Metamorphic gaasp and ingap photovoltaic materials on Si for high-efficiency III-V/Si multijunction solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 2029-2033

  Grassman, T J ^a   Carlin, A M ^a   Ringel, S A ^a  

^a Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION CONSTANT; ABSORPTION PROPERTY; BAND GAPS; GAAS; GRADED BUFFER; HIGH EFFICIENCY; INGAP PHOTOVOLTAIC; MULTI JUNCTION SOLAR CELLS; MULTI-JUNCTION PHOTOVOLTAICS; OPTICAL EMISSIONS; OPTICAL TRANSPARENCY; PHOTOLUMINESCENCE MEASUREMENTS; SI SUBSTRATES; VISIBLE SPECTRA;

ABSORPTION; ENERGY GAP; GALLIUM ALLOYS; GALLIUM ARSENIDE; MULTIPHOTON PROCESSES; PHOTONS; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING GALLIUM;

SOLAR POWER GENERATION;

EID: 78650158031     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5616938     Document Type: Conference Paper

References (9)

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