Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition

Applied Physics Letters

Volumn 102, Issue 14, 2013, Pages

  Grassman, T J ^a   Carlin, J A ^b   Galiana, B ^b   Yang, L M ^a   Yang, F ^a   Mills, M J ^a   Ringel, S A ^a,b  

^a Ohio State University   (United States)

^b OHIO STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIPHASE DOMAINS; DEFECT-FREE; HOMO EPITAXIES; MICROTWINS; SI (100) SUBSTRATE; SI SURFACES; STEP BUNCHING; TRANSMISSION ELECTRON MICROSCOPY (TEM);

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; SILICON; SURFACE DEFECTS; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

GALLIUM ALLOYS;

EID: 84876354638     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4801498     Document Type: Article

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