Epitaxially-grown metamorphic GaAsP/Si dual-junction solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2013, Pages 149-153

  Grassman, T J ^a   Carlin, J A ^b   Ratcliff, C ^a   Chmielewski, D J ^a   Ringel, S A ^a,b  

^a Ohio State University   (United States)

^b OHIO STATE UNIVERSITY   (United States)

Author keywords

Epitaxial layers; III V semiconductor materials; Photovoltaic cells; Silicon; Tunneling

Indexed keywords

ELECTRON TUNNELING; EPITAXIAL LAYERS; GALLIUM ALLOYS; GALLIUM ARSENIDE; GRADING; INTERFACES (MATERIALS); PHOTOVOLTAIC CELLS; SILICON; SOLAR CELLS;

ALLOY SYSTEM; DUAL-JUNCTION; HIGH QUALITY; MULTI JUNCTION SOLAR CELLS; PHOTOVOLTAIC PERFORMANCE; REDUCED COST; SI SUBSTRATES; SUB-CELLS;

EPITAXIAL GROWTH;

EID: 84896448802     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2013.6744117     Document Type: Conference Paper

References (16)

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