Spectrum-optimized Si-based III-V multijunction photovoltaics

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8256, Issue , 2012, Pages

  Grassman, Tyler J ^a,b   Carlin, Andrew M ^a   Grandal, Javier ^a   Ratcliff, Chris ^a   Yang, Limei ^a   Mills, Michael J ^a   Ringel, Steven A ^a,b  

^a The Ohio State University   (United States)

^b OHIO STATE UNIVERSITY   (United States)

Author keywords

Epitaxy; III V; Integration; Lattice mismatch; Metamorphic; Photovoltaic; Si; Solar cell

Indexed keywords

BUFFER SYSTEM; DEFECT-FREE; DISLOCATION GLIDE; GAAS; GROWTH CONDITIONS; III-V; INTEGRATION PROCESS; METAMORPHIC; METAMORPHIC BUFFERS; MULTI JUNCTION SOLAR CELLS; MULTI-JUNCTION PHOTOVOLTAICS; NON-TRIVIAL; PHOTOVOLTAIC; PHOTOVOLTAICS; SI (100) SUBSTRATE; SI-BASED; SOLAR SPECTRUM; THREADING DISLOCATION DENSITIES;

GALLIUM ALLOYS; GALLIUM ARSENIDE; GROWTH (MATERIALS); INTEGRATION; LATTICE MISMATCH; NANOSTRUCTURED MATERIALS; PHOTONIC DEVICES; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING GALLIUM; SILICON; SOLAR CELLS;

EPITAXIAL GROWTH;

EID: 84859986445     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.909658     Document Type: Conference Paper

References (10)

1. x-Si substrates," IEEE Trans. Electron Devices 52(6), 1055-1060 (2005). (Pubitemid 40871138)
2. oc using graded GeSi buffers," 28th IEEE Photovoltaic Specialists Conference, 1006-1011 (2000).
3. Lueck, M. R., Andre, C. L., Pitera, A. J., Lee, M. L., Fitzgerald, E. A. and Ringel, S. A., "Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage," IEEE Electron Device Lett. 27(3), 142-144 (2006).
4. Grassman, T. J., Brenner, M. R., Rajagopalan, S., Unocic, R., Dehoff, R., Mills, M., Fraser, H. and Ringel, S. A., "Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy," Appl. Phys. Lett. 94(23), 232106 (2009).
5. Grassman, T. J., Brenner, M. R., Gonzalez, M., Carlin, A. M., Unocic, R. R., Dehoff, R. R., Mills, M. J. and Ringel, S. A., "Characterization of Metamorphic GaAsP/Si Materials and Devices for Photovoltaic Applications," IEEE Trans. Electron Devices 57(10), 3361-3369 (2010).
6. Grassman, T. J., Carlin, A. M. and Ringel, S. A., "Metamorphic GaAsP and InGaP photovoltaic materials on Si for high-efficiency III-V/Si multijunction solar cells," Proc. 35th IEEE Photovoltaic Specialists Conference, 002029-002033 (2010).
7. th World Conference on Photovoltaic Energy Conversion, 772-775 (2006).
8. Narayanan, V., Mahajan, S., Sukidi, N., Bachmann, K. J., Woods, V. and Dietz, N., "Orientation mediated selfassembled gallium phosphide islands grown on silicon," Philos. Mag. A 80(3), 555-572 (2000). (Pubitemid 35393515)
9. Yonenaga, I., "Mechanical properties and dislocation dynamics in III-V compounds," J. Phys. III 7(7), 1435-1450 (1997). (Pubitemid 127801543)
10. Ratcliff, C., Grassman, T. J., Carlin, J. A. and Ringel, S. A., "High temperature step-flow growth of gallium phosphide by molecular beam epitaxy and metalorganic chemical vapor deposition," Appl. Phys. Lett. 99, 141905 (2011).