Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire

Journal of Crystal Growth

Volumn 370, Issue , 2013, Pages 63-67

  Gautier, S ^a,b,c   Moudakir, T ^c   Patriarche, G ^d   Rogers, D J ^e   Sandana, V E ^e   Téherani, F Hosseini ^e   Bove, P ^e   El Gmili, Y ^c   Pantzas, K ^c,h   Sundaram, Suresh ^c   Troadec, D ^f   Voss, P L ^c,h   Razeghi, M ^g   Ougazzaden, A ^c,h  

^a UNIVERSITÉ DE LORRAINE   (France)

^b SUPELEC   (France)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^d CNRS   (France)

^e 8 Route de Chevreuse France   (France)

^f INSTITUT D ELECTRONIQUE   (France)

^g Northwestern University   (United States)

^h GEORGIA TECH LORRAINE   (France)

Author keywords

A3. Chemical lift off; A3. Direct wafer bonding; A3. MOVPE; B1. GaN

Indexed keywords

CHEMICAL BONDS; ELECTRON MICROSCOPY; GALLIUM ALLOYS; GALLIUM NITRIDE; GLASS; GLASS BONDING; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; SUBSTRATES; TEMPERATURE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZINC OXIDE; ZINC SULFIDE;

B1. GAN; CHEMICAL LIFT-OFFS; COMPOSITIONAL CHARACTERIZATION; DIRECT WAFER BONDING; QUALITY OF INTERFACES; SAPPHIRE SUBSTRATES; SINGLE CRYSTAL SUBSTRATES; SODA LIME GLASS SUBSTRATE;

WAFER BONDING;

EID: 84896456811     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.08.048     Document Type: Article

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