Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template layers to chemically lift-off GaN from c-sapphire

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8263, Issue , 2012, Pages

  Rogers, D J ^a   Ougazzaden, A ^b,c   Sandana, V E ^a,d,e   Moudakir, T ^b   Ahaitouf, A ^c   Teherani, F Hosseini ^a   Gautier, S ^c,f   Goubert, L ^a,d,e   Davidson, I A ^g   Prior, K A ^g   McClintock, R P ^h   Bove, P ^a   Drouhin, H J ^d   Razeghi, M ^e  

^a 8 Route de Chevreuse France   (France)

^b GEORGIA TECH LORRAINE   (France)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (France)

^d ECOLE POLYTECHNIQUE   (France)

^e NORTHWESTERN UNIVERSITY   (United States)

^f SUPELEC   (France)

^g HERIOT WATT UNIVERSITY   (United Kingdom)

^h MP Technologies LLC   (United States)

Author keywords

(In)GaN; Chemical Lift off; Direct Wafer Bonding; Glass Substrate; LED; Multijunction Photovoltaic; Selective Wet Etching; ZnO

Indexed keywords

(IN)GAN; DIRECT WAFER BONDING; GLASS SUBSTRATE; MULTIJUNCTION; SELECTIVE WET ETCHING; ZNO;

GLASS BONDING; LIGHT EMITTING DIODES; OPTICAL MICROSCOPY; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; WET ETCHING; X RAY DIFFRACTION; ZINC OXIDE; ZINC SULFIDE;

GALLIUM NITRIDE;

EID: 84858607386     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.916013     Document Type: Conference Paper

References (16)

1. R. Haitz & J. Y. Tsao Phys. Status Solidi A 208, 1 (2011) 17
2. E. Matioli et al. Appl. Phys. Lett. 98, (2011) 021102
3. D. J. Rogers et al. Proc. of SPIE 5732 (2005) 412
4. D. J. Rogers et al. Appl. Phys. Lett. 91 7 (2007) 071120
5. A. Ougazzaden et al., Journal of Crystal Growth 310 (2008) 944-947
6. D. J. Rogers et al. J. Vac. Sci. Technol. B 27, 3 (2009) 1655
7. A. Ougazzaden et al., Proc. of SPIE 7603 (2010) 76031D-1
8. S. Gautier et al., Proc. of SPIE 7940 (2011) 79400X-1
9. W. S. Wong et al. Appl. Phys. Lett. 75 (1999) 1360
10. E. Yablonovich et al. Appl. Phys. Lett. 56, 2419 (1990).
11. M. Konagai et al. Journal of Crystal Growth 45 (1978) 277
12. E. Yablonovich et al. Appl. Phys. Lett. 51 26 (1987) 2222
13. A. Balocchi et al. Appl. Phys. Lett. 86, (2005) 011915
14. C. Bradford et al. Journal of Crystal Growth 278 (2005) 325-328
15. A. Curran et al. Semicond. Sci. Technol. 22 (2007) 1189-1192
16. J. J. Schermer et al. Phys. Stat. Sol. (a) 202, No. 4, (2005) 501-508