Transition metal oxide window layer in thin film amorphous silicon solar cells

Thin Solid Films

Volumn 556, Issue , 2014, Pages 515-519

  Fang, Liang ^a   Baik, Seung Jae ^b   Lim, Koeng Su ^c  

^a TIANJIN INSTITUTE OF POWER SOURCES   (China)

^b Hankyong National University   (South Korea)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Amorphous silicon solar cells; Thin film; Transition metal oxides; Window layer

Indexed keywords

ELECTRIC RESISTANCE; METALLIC COMPOUNDS; MOLYBDENUM OXIDE; OXIDES; SILICON; SILICON SOLAR CELLS; THIN FILMS; TRANSITION METALS;

COMPOSITIONAL VARIATION; DESIGN PRINCIPLES; FUNCTION PROPERTIES; HIGH WORK FUNCTION; SERIES RESISTANCES; STATE OF THE ART; TRANSITION-METAL OXIDES; WINDOW LAYER;

AMORPHOUS SILICON;

EID: 84896389515     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2014.01.037     Document Type: Article

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