SCOPUS 정보 검색 플랫폼

Volumn 96, Issue 19, 2010, Pages

Tungsten oxide as a buffer layer inserted at the SnO2 /p-a-SiC interface of pin-type amorphous silicon based solar cells

(7) Fang, Liang a Baik, Seung Jae a Lim, Koeng Su a Yoo, Seung Hyup a Seo, Myung Soo a Kang, Sang Jung a Won Seo, Jung a

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

P-TYPE; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIER MODELS; TUNGSTEN OXIDE; WINDOW LAYER;

BUFFER LAYERS; CONVERSION EFFICIENCY; OPEN CIRCUIT VOLTAGE; OXIDES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SOLAR CELLS; TUNGSTEN; TUNGSTEN COMPOUNDS;

AMORPHOUS SILICON;

EID: 77953014801 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3427396 Document Type: Article

Times cited : (39)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.