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Volumn 96, Issue 13, 2010, Pages

Effect of contamination on the electronic structure and hole-injection properties of MoO3 /organic semiconductor interfaces

(4) Meyer, J a Shu, A a Kroger M b Kahn, A a

a Princeton University (United States)

b INNOVATIONLAB (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COST MANUFACTURING; CURRENT-VOLTAGE MEASUREMENTS; EVAPORATED FILMS; HOLE-INJECTION PROPERTIES; INVERSE PHOTOEMISSION SPECTROSCOPY; IONIZATION ENERGIES; MOLYBDENUM TRIOXIDE; NON-VACUUM; ORGANIC SEMICONDUCTOR; POTENTIAL APPLICATIONS; TRANSITION-METAL OXIDES;

ELECTRON AFFINITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; HOLE TRAPS; MOLYBDENUM; TRANSITION METAL COMPOUNDS; TRANSITION METALS; VACUUM APPLICATIONS;

CONTAMINATION;

EID: 77950480181 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3374333 Document Type: Article

Times cited : (185)

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