Amorphous Si rear Schottky junction solar cell with a LiF/Al back electrode

IEEE Transactions on Electron Devices

Volumn 58, Issue 9, 2011, Pages 3048-3052

  Fang, Liang ^a   Baik, Seung Jae ^a   Lim, Sooyeon ^b   Yoo, Seunghyup ^a   Lim, Koeng Su ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Absorption loss; amorphous Si (a Si) solar cell; LiF; Schottky junction

Indexed keywords

A-SI LAYERS; ABSORPTION LOSS; AMORPHOUS SI; BACK ELECTRODE; FILL FACTOR; HIGH EFFICIENCY; LIF; LONG WAVELENGTH; OVERALL POWER CONVERSION EFFICIENCY; PHOTOCARRIER; SCHOTTKY JUNCTION; SCHOTTKY JUNCTIONS; SERIES RESISTANCES; THIN FILM PHOTOVOLTAICS; ULTRA-THIN;

ABSORPTION; AMORPHOUS FILMS; AMORPHOUS SILICON; CONVERSION EFFICIENCY; OPEN CIRCUIT VOLTAGE; SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80052079873     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2160267     Document Type: Article

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