P-Type hydrogenated silicon oxide thin film deposited near amorphous to microcrystalline phase transition and its application to solar cells

Current Applied Physics

Volumn 11, Issue 1 SUPPL., 2011, Pages

  Sriprapha, Kobsak ^a   Sitthiphol, Nopphadol ^a   Sangkhawong, Puchong ^a   Sangsuwan, Vichit ^a   Limmanee, Amornrat ^a   Sritharathikhun, Jaran ^a  

^a NATIONAL SCIENCE AND TECHNOLOGY DEVELOPMENT AGENCY   (Thailand)

Author keywords

p Type hydrogenated amorphous silicon oxide; Phase transition; Protocrystalline silicon oxide; Thin film silicon solar cell

Indexed keywords

A-SI:H; CELL CONVERSION EFFICIENCY; DIBORANE; HYDROGENATED AMORPHOUS SILICON; HYDROGENATED SILICON; MIXED GAS; OXYGEN ATOM; P-LAYER; P-TYPE; PEAK POSITION; PROTOCRYSTALLINE SILICON OXIDE; RAMAN SPECTRA; THIN FILM SILICON SOLAR CELL; THIN-FILM SILICON SOLAR CELLS; TRANSITION REGIONS; TRIMETHYLBORON;

AMORPHOUS FILMS; CARBON DIOXIDE; CONVERSION EFFICIENCY; HYDROGENATION; MICROCRYSTALLINE SILICON; OPEN CIRCUIT VOLTAGE; OXIDE FILMS; OXYGEN; PHASE TRANSITIONS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON OXIDES; SILICON SOLAR CELLS; SOLAR CELLS; THIN FILMS; VAPOR DEPOSITION;

AMORPHOUS SILICON;

EID: 79953173904     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2010.11.008     Document Type: Conference Paper

References (5)

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