-
1
-
-
0019008112
-
Design considerations for a-Si solar cells
-
V. Dalal, 'Design considerations for a-Si solar cells', IEEE Trans. Electron Devices, ED-27, 662 (1980).
-
(1980)
IEEE Trans. Electron Devices
, vol.ED-27
, pp. 662
-
-
Dalal, V.1
-
2
-
-
0004005306
-
-
Wiley, New York
-
S. Sze, 'Physics of Semiconductor Devices', 2nd Edn., p. 827, Wiley, New York, 1980.
-
(1980)
'Physics of Semiconductor Devices', 2nd Edn.
, pp. 827
-
-
Sze, S.1
-
3
-
-
36549091084
-
Physics of amorphous silicon alloy p-i-n solar cells
-
M. Hack and M. Shur, 'Physics of amorphous silicon alloy p-i-n solar cells', J. Appl. Phys., 58(2), 997 (1985).
-
(1985)
J. Appl. Phys.
, vol.58
, Issue.2
, pp. 997
-
-
Hack, M.1
Shur, M.2
-
4
-
-
33646561181
-
Computer simulation model of the effects of interface states on high-performance amorphous silicon solar cells
-
H. Tasaki, W. Y. Kim, M. Hallerdt, M. Konagai and K. Takahashi, 'Computer simulation model of the effects of interface states on high-performance amorphous silicon solar cells', J. Appl. Phys., 63(2), 550 (1988).
-
(1988)
J. Appl. Phys.
, vol.63
, Issue.2
, pp. 550
-
-
Tasaki, H.1
Kim, W.Y.2
Hallerdt, M.3
Konagai, M.4
Takahashi, K.5
-
5
-
-
0001080366
-
Computer analysis of the role of p-layer quality, thickness, transport mechanisms, and contact barrier height in the performance of hydrogenated amorphous silicon p-i-n solar cells
-
J. K. Arch, F. A., Rubinelli, J. Y. Hou and S. J. Fonash, 'Computer analysis of the role of p-layer quality, thickness, transport mechanisms, and contact barrier height in the performance of hydrogenated amorphous silicon p-i-n solar cells', J. Appl. Phys., 69(10), 7057 (1991).
-
(1991)
J. Appl. Phys.
, vol.69
, Issue.10
, pp. 7057
-
-
Arch, J.K.1
Rubinelli, F.A.2
Hou, J.Y.3
Fonash, S.J.4
-
6
-
-
0000786697
-
Effects of abrupt and graded a-Si:C:H/a-Si:H interface on internal properties and external characteristics of p-i-n a-Si:H solar cells
-
F. Smole and J. Furlan, 'Effects of abrupt and graded a-Si:C:H/a-Si:H interface on internal properties and external characteristics of p-i-n a-Si:H solar cells', J. Appl. Phys., 72(12), 5964 (1992).
-
(1992)
J. Appl. Phys.
, vol.72
, Issue.12
, pp. 5964
-
-
Smole, F.1
Furlan, J.2
-
7
-
-
0028693515
-
Parametric Analysis of a-Si Solar cells from current voltage measurements
-
IEEE, New York
-
Steven S. Hegedus and J. E. Phillips, 'Parametric Analysis of a-Si Solar cells from current voltage measurements', Proc. 1st World Conference on Photovoltaic Energy Conversion (WCPEC), p. 654, IEEE, New York, 1994.
-
(1994)
Proc. 1st World Conference on Photovoltaic Energy Conversion (WCPEC)
, pp. 654
-
-
Hegedus, S.S.1
Phillips, J.E.2
-
8
-
-
0020887639
-
Modeling of thin film solar cells: Uniform field approximation
-
R. S. Crandall, 'Modeling of thin film solar cells: uniform field approximation', J. Appl. Phys., 54(12), 7176 (1983).
-
(1983)
J. Appl. Phys.
, vol.54
, Issue.12
, pp. 7176
-
-
Crandall, R.S.1
-
9
-
-
0021393772
-
Determination of carrier collection length and prediction of fill factor in amorphous silicon solar cells
-
B. W. Faughnan and R. S. Crandall, 'Determination of carrier collection length and prediction of fill factor in amorphous silicon solar cells', Appl. Phys. Lett., 44, 537 (1984).
-
(1984)
Appl. Phys. Lett.
, vol.44
, pp. 537
-
-
Faughnan, B.W.1
Crandall, R.S.2
-
10
-
-
0001498409
-
Amorphous silicon p-i-n solar cells with graded interface
-
R. R. Arya, A. Catalano and R. S. Oswald, 'Amorphous silicon p-i-n solar cells with graded interface', Appl. Phys. Lett., 49(17), 1089 (1986).
-
(1986)
Appl. Phys. Lett.
, vol.49
, Issue.17
, pp. 1089
-
-
Arya, R.R.1
Catalano, A.2
Oswald, R.S.3
-
11
-
-
1842792902
-
Direct measurement of the mobility-lifetime product of holes and electrons in an amorphous silicon p-i-n cell
-
R. S. Crandall and K. Sadlon, 'Direct measurement of the mobility-lifetime product of holes and electrons in an amorphous silicon p-i-n cell', Mater. Res. Soc. Symp. Proc., 149, 423 (1989).
-
(1989)
Mater. Res. Soc. Symp. Proc.
, vol.149
, pp. 423
-
-
Crandall, R.S.1
Sadlon, K.2
-
12
-
-
6244232861
-
Improvement of low bandgap a-SiGe pin cells for tandem type solar cells
-
Y. Higaki, M. Aiga, S. Terazono and Y. Yukimoto, 'Improvement of low bandgap a-SiGe pin cells for tandem type solar cells', Technical Digests of International PVSEC-1, 1984, p. 209.
-
(1984)
Technical Digests of International PVSEC-1
, pp. 209
-
-
Higaki, Y.1
Aiga, M.2
Terazono, S.3
Yukimoto, Y.4
-
13
-
-
0000240022
-
Analytical and numerical modeling of amorphous silicon p-i-n solar cells
-
K. Misiakos and F. A. Lindholm, 'Analytical and numerical modeling of amorphous silicon p-i-n solar cells', J. Appl. Phys., 64, 383 (1988).
-
(1988)
J. Appl. Phys.
, vol.64
, pp. 383
-
-
Misiakos, K.1
Lindholm, F.A.2
-
15
-
-
0004793052
-
Photocurrent collection in a Schottky barrier on an amorphous silicon-germanium alloy structure with 1.23 eV optical gap
-
V. Chu, J. P. Conde, D. S. Shen and S. Wagner, 'Photocurrent collection in a Schottky barrier on an amorphous silicon-germanium alloy structure with 1.23 eV optical gap', Appl. Phys. Lett., 55(3), 262 (1989).
-
(1989)
Appl. Phys. Lett.
, vol.55
, Issue.3
, pp. 262
-
-
Chu, V.1
Conde, J.P.2
Shen, D.S.3
Wagner, S.4
-
16
-
-
6244303806
-
-
personal communication, 8 October
-
R. Rocheleau, personal communication, 8 October 1996.
-
(1996)
-
-
Rocheleau, R.1
-
17
-
-
0025421046
-
Optical losses in multi-junction a-Si:H based solar cells and modules
-
IEEE, New York
-
S. Wiedeman, J. Morris and L. Yang, 'Optical losses in multi-junction a-Si:H based solar cells and modules', Conf. Rec. 21st IEEE Photovoltaic Specialist Conference, p. 1529, IEEE, New York, 1990.
-
(1990)
Conf. Rec. 21st IEEE Photovoltaic Specialist Conference
, pp. 1529
-
-
Wiedeman, S.1
Morris, J.2
Yang, L.3
-
18
-
-
0001189338
-
Dark current transport mechanism of p-i-n hydrogenated amorphous silicon diodes
-
H. Matsuura, A. Matsuda, H. Okushi and K. Tanaka, 'Dark current transport mechanism of p-i-n hydrogenated amorphous silicon diodes', J. Appl. Phys., 58(4), 1578 (1985).
-
(1985)
J. Appl. Phys.
, vol.58
, Issue.4
, pp. 1578
-
-
Matsuura, H.1
Matsuda, A.2
Okushi, H.3
Tanaka, K.4
-
19
-
-
0023565639
-
A role of composition graded layer in p/i interface of amorphous silicon solar cell
-
IEEE, New York
-
Y. Yamamoto, K. Nomoto, T. Okuno, S. Moriuchi, Y. Nakata and T. Inoguchi, 'A role of composition graded layer in p/i interface of amorphous silicon solar cell', Conf. Rec. 19th IEEE Photovoltaic Specialist Conference, p. 901, IEEE, New York, 1987.
-
(1987)
Conf. Rec. 19th IEEE Photovoltaic Specialist Conference
, pp. 901
-
-
Yamamoto, Y.1
Nomoto, K.2
Okuno, T.3
Moriuchi, S.4
Nakata, Y.5
Inoguchi, T.6
-
20
-
-
36549099039
-
The relation of dark and illuminated diode parameters to the open-circuit voltage of amorphous silicon p-i-n solar cells
-
S. S. Hegedus, N. Salzman and E. Fagen, 'The relation of dark and illuminated diode parameters to the open-circuit voltage of amorphous silicon p-i-n solar cells', J. Appl. Phys., 63(10), 5126 (1988).
-
(1988)
J. Appl. Phys.
, vol.63
, Issue.10
, pp. 5126
-
-
Hegedus, S.S.1
Salzman, N.2
Fagen, E.3
-
21
-
-
0005222416
-
Dark J-V characteristics of p-i-n a-Si:H solar cells
-
A. Mittiga, P. Fiorini, M. Flaconieri and F. Evangelisti, 'Dark J-V characteristics of p-i-n a-Si:H solar cells', J. Appl. Phys., 66(6), 2667 (1989).
-
(1989)
J. Appl. Phys.
, vol.66
, Issue.6
, pp. 2667
-
-
Mittiga, A.1
Fiorini, P.2
Flaconieri, M.3
Evangelisti, F.4
-
22
-
-
0000201306
-
oc in p-i-n a-Si solar cells
-
oc in p-i-n a-Si solar cells', J. Appl. Phys., 67(7), 3494 (1990).
-
(1990)
J. Appl. Phys.
, vol.67
, Issue.7
, pp. 3494
-
-
Sakai, H.1
Yoshida, T.2
Fujikake, S.3
Hama, T.4
Ichikawa, Y.5
-
23
-
-
0025445581
-
Analysis of apparent quantum efficiency
-
J. R. Sites, H. Tavakolian and R. A. Sasala, 'Analysis of apparent quantum efficiency', Sol. Cells, 29, 39 (1990).
-
(1990)
Sol. Cells
, vol.29
, pp. 39
-
-
Sites, J.R.1
Tavakolian, H.2
Sasala, R.A.3
-
24
-
-
0023596426
-
A method for determining the conversion efficiency of multiple-cell photovoltaic devices
-
IEEE, New York
-
T. Glatfelter and J. Burdick, 'A method for determining the conversion efficiency of multiple-cell photovoltaic devices', Conf. Rec. 19th IEEE Photovoltaic Specialist Conference, p. 1187, IEEE, New York, 1987.
-
(1987)
Conf. Rec. 19th IEEE Photovoltaic Specialist Conference
, pp. 1187
-
-
Glatfelter, T.1
Burdick, J.2
-
25
-
-
0003610598
-
Photoconductivity, trapping, and recombination in discharge-produced, hydrogenated amorphous silicon
-
C. R. Wronski and R. E. Daniel, 'Photoconductivity, trapping, and recombination in discharge-produced, hydrogenated amorphous silicon', Phys. Rev. B., 23(2), 794 (1981).
-
(1981)
Phys. Rev. B.
, vol.23
, Issue.2
, pp. 794
-
-
Wronski, C.R.1
Daniel, R.E.2
-
26
-
-
0004393975
-
Photoconductivity and recombination in amorphous silicon alloys
-
M. Hack, S. Guha and M. Shur, 'Photoconductivity and recombination in amorphous silicon alloys', Phys. Rev. B, 30(12), 6991 (1984).
-
(1984)
Phys. Rev. B
, vol.30
, Issue.12
, pp. 6991
-
-
Hack, M.1
Guha, S.2
Shur, M.3
-
27
-
-
6244263755
-
Stationary primary photocurrents for the characterization of a-Si:H pin-diodes
-
C. D. Abel, H. R. Paes and G. H. Bauer, 'Stationary primary photocurrents for the characterization of a-Si:H pin-diodes', Proc. 10th Eur. PVSEC, 1991, p. 161.
-
(1991)
Proc. 10th Eur. PVSEC
, pp. 161
-
-
Abel, C.D.1
Paes, H.R.2
Bauer, G.H.3
-
28
-
-
6244274108
-
Steady-state mobility lifetimes and photoconductivity in a-SiGe:H thin films
-
S. S. Hegedus and J. M. Cebulka, 'Steady-state mobility lifetimes and photoconductivity in a-SiGe:H thin films', J. Appl. Phys., 67(8), 3885 (1990).
-
(1990)
J. Appl. Phys.
, vol.67
, Issue.8
, pp. 3885
-
-
Hegedus, S.S.1
Cebulka, J.M.2
-
29
-
-
0343589602
-
Effect of low-level boron doping and its implication to the nature of gap states in hydrogenated amorphous silicon
-
Liyou Yang, A. Catalano, R. R. Arya and I. Balberg, 'Effect of low-level boron doping and its implication to the nature of gap states in hydrogenated amorphous silicon', Appl. Phys. Lett., 57(9), 908 (1990).
-
(1990)
Appl. Phys. Lett.
, vol.57
, Issue.9
, pp. 908
-
-
Yang, L.1
Catalano, A.2
Arya, R.R.3
Balberg, I.4
-
30
-
-
3943109262
-
Effect of the dangling-bond charge on the ambipolar diffusion length in a-Si:H
-
E. Sauvain, J. Hubin, A. Shah and P. Pipoz, 'Effect of the dangling-bond charge on the ambipolar diffusion length in a-Si:H', Philos. Mag. Lett., 63(6), 327 (1991).
-
(1991)
Philos. Mag. Lett.
, vol.63
, Issue.6
, pp. 327
-
-
Sauvain, E.1
Hubin, J.2
Shah, A.3
Pipoz, P.4
-
31
-
-
0342344426
-
Ambipolar diffusion length measurements in hydrogenated amorphous silicon
-
I. Balberg, K. A. Epstein and D. Ritter, 'Ambipolar diffusion length measurements in hydrogenated amorphous silicon', Appl. Phys. Lett., 54(24), 2461 (1989).
-
(1989)
Appl. Phys. Lett.
, vol.54
, Issue.24
, pp. 2461
-
-
Balberg, I.1
Epstein, K.A.2
Ritter, D.3
-
32
-
-
0024180391
-
Flat-band voltage of a-Si pin solar cells from spectral characteristics
-
IEEE, New York
-
H. Pfleiderer, W. Kusian, E. Gunzel and J. Grabmaier, 'Flat-band voltage of a-Si pin solar cells from spectral characteristics', Conf. Rec. 20th IEEE Photovoltaic Specialist Conference, p. 180, IEEE, New York, 1988.
-
(1988)
Conf. Rec. 20th IEEE Photovoltaic Specialist Conference
, pp. 180
-
-
Pfleiderer, H.1
Kusian, W.2
Gunzel, E.3
Grabmaier, J.4
-
33
-
-
36749111025
-
Collection efficiency of low-mobility solar cells
-
J. Reichman, 'Collection efficiency of low-mobility solar cells', Appl. Phys. Lett., 38(4), 251 (1981).
-
(1981)
Appl. Phys. Lett.
, vol.38
, Issue.4
, pp. 251
-
-
Reichman, J.1
-
34
-
-
4243798052
-
Light-induced metastable defects in hydrogenated amorphous silicon
-
M. Stutzmann, W. Jackson and C. C. Tsai, 'Light-induced metastable defects in hydrogenated amorphous silicon', Phys. Rev. B, 32, 23 (1985).
-
(1985)
Phys. Rev. B
, vol.32
, pp. 23
-
-
Stutzmann, M.1
Jackson, W.2
Tsai, C.C.3
-
35
-
-
0000473771
-
Stead-state photocarrier grating technique for diffusion-length measurement in semiconductors: Theory and experimental results for amorphous silicon and semi-insulating GaAs
-
D. Ritter, K. Weiser and E. Zeldov, 'Stead-state photocarrier grating technique for diffusion-length measurement in semiconductors: theory and experimental results for amorphous silicon and semi-insulating GaAs', J. Appl. Phys., 62(11), 4563 (1987).
-
(1987)
J. Appl. Phys.
, vol.62
, Issue.11
, pp. 4563
-
-
Ritter, D.1
Weiser, K.2
Zeldov, E.3
-
36
-
-
0028382946
-
Dependence of the light-induced degradation kinetics of photoconductivity and ambipolar diffusion length as a function of doping level in a-Si:H
-
E. Sauvain, P. Pipoz, A. Shah and J. Hubin, 'Dependence of the light-induced degradation kinetics of photoconductivity and ambipolar diffusion length as a function of doping level in a-Si:H', J. Appl. Phys., 75(3), 1722 (1994).
-
(1994)
J. Appl. Phys.
, vol.75
, Issue.3
, pp. 1722
-
-
Sauvain, E.1
Pipoz, P.2
Shah, A.3
Hubin, J.4
-
37
-
-
0030563536
-
Stability of the mobility-lifetime product of holes in undoped a-Si:H under illumination
-
F. Wang and R. Schwarz, 'Stability of the mobility-lifetime product of holes in undoped a-Si:H under illumination', J. Non-Cryst. Solids, 198-200, 423 (1996).
-
(1996)
J. Non-Cryst. Solids
, vol.198-200
, pp. 423
-
-
Wang, F.1
Schwarz, R.2
-
38
-
-
84897676491
-
Stability studies of hydrogenated amorphous silicon alloy solar cells prepared with hydrogen dilution
-
J. Yang, X. Xu and S. Guha, 'Stability studies of hydrogenated amorphous silicon alloy solar cells prepared with hydrogen dilution', Mater. Res. Soc. Symp. Proc., 336, 687 (1994).
-
(1994)
Mater. Res. Soc. Symp. Proc.
, vol.336
, pp. 687
-
-
Yang, J.1
Xu, X.2
Guha, S.3
-
39
-
-
6244250222
-
Improvement of mobility-lifetime product of holes in a-SiGe:H alloys prepared with hydrogen dilution
-
P. Chaudhuri, A. R. Middya and S. Ray, 'Improvement of mobility-lifetime product of holes in a-SiGe:H alloys prepared with hydrogen dilution', Technical Digests of International PVSEC-6, 1992, p. 631.
-
(1992)
Technical Digests of International PVSEC-6
, pp. 631
-
-
Chaudhuri, P.1
Middya, A.R.2
Ray, S.3
-
40
-
-
0025420404
-
Ambipolar diffusion length in a-Si:H(F) and a-SiGe:H,F measured with the steady-state photocarrier grating technique
-
IEEE, New York
-
J. Z. Liu, X. Li, P. Roca i Cabarrocas, J. P. Conde, A. Maruyama, H. Park, S. Wagner and A. E. Delahoy, 'Ambipolar diffusion length in a-Si:H(F) and a-SiGe:H,F measured with the steady-state photocarrier grating technique', Conf. Rec. 21st IEEE Photovoltaic Specialist Conference, p. 1606, IEEE, New York, 1990.
-
(1990)
Conf. Rec. 21st IEEE Photovoltaic Specialist Conference
, pp. 1606
-
-
Liu, J.Z.1
Li, X.2
Roca I Cabarrocas, P.3
Conde, J.P.4
Maruyama, A.5
Park, H.6
Wagner, S.7
Delahoy, A.E.8
-
41
-
-
0025472583
-
Optoelectronic properties of amorphous hydrogenated silicon-germanium alloys
-
G. Conte, D. Della Sala, F. Galluzzi, G. Grillo, C. Ostrifate and C. Reita, 'Optoelectronic properties of amorphous hydrogenated silicon-germanium alloys', Semicond. Sci. Technol., 5, 890 (1990).
-
(1990)
Semicond. Sci. Technol.
, vol.5
, pp. 890
-
-
Conte, G.1
Della Sala, D.2
Galluzzi, F.3
Grillo, G.4
Ostrifate, C.5
Reita, C.6
-
42
-
-
3643068782
-
Diffusion lengths in a-SiGe:H and a-SiC:H alloys from optical grating technique
-
G. H. Bauer, C. R. Nebel and N.-D. Mohring, 'Diffusion lengths in a-SiGe:H and a-SiC:H alloys from optical grating technique', Mater. Res. Soc. Symp. Proc., 118, 679 (1988).
-
(1988)
Mater. Res. Soc. Symp. Proc.
, vol.118
, pp. 679
-
-
Bauer, G.H.1
Nebel, C.R.2
Mohring, N.-D.3
-
43
-
-
0021393225
-
Relationship between collection length and diffusion length in amorphous silicon
-
A.
-
B. Faughnan, A. and R. Crandall, 'Relationship between collection length and diffusion length in amorphous silicon', Appl. Phys. Lett., 44(6), 613 (1984).
-
(1984)
Appl. Phys. Lett.
, vol.44
, Issue.6
, pp. 613
-
-
Faughnan, B.1
Crandall, R.2
-
44
-
-
0020767056
-
Mobility-lifetime product and interface property in amorphous silicon solar cells
-
H. Okamoto, H. Kida, S. Nonomura, K. Fukumoto and Y. Hamakawa, 'Mobility-lifetime product and interface property in amorphous silicon solar cells', J. Appl. Phys., 54(6), 3236 (1983).
-
(1983)
J. Appl. Phys.
, vol.54
, Issue.6
, pp. 3236
-
-
Okamoto, H.1
Kida, H.2
Nonomura, S.3
Fukumoto, K.4
Hamakawa, Y.5
-
45
-
-
0027592572
-
Dependence of open circuit voltage of amorphous silicon solar cells on thickness and doping level of the p-layer
-
M. Isomura, T. Takahama, S. Tsuda and S. Nakano, 'Dependence of open circuit voltage of amorphous silicon solar cells on thickness and doping level of the p-layer', Jpn. J. Appl. Phys., 32, 1902 (1993).
-
(1993)
Jpn. J. Appl. Phys.
, vol.32
, pp. 1902
-
-
Isomura, M.1
Takahama, T.2
Tsuda, S.3
Nakano, S.4
-
46
-
-
6244268885
-
Correlation of open circuit voltage with bandgap in amorphous silicon p-i-n solar cells
-
R. Crandall and E. Schiff, 'Correlation of open circuit voltage with bandgap in amorphous silicon p-i-n solar cells', AIP Conf. Proc., 353, 101 (1996).
-
(1996)
AIP Conf. Proc.
, vol.353
, pp. 101
-
-
Crandall, R.1
Schiff, E.2
-
47
-
-
84897583826
-
Built-in potentials via electroabsorption measurements in a-Si:H p-i-n solar cells: A critical assessment
-
Q. Wang, E. A. Schiff and S. S. Hegedus, 'Built-in potentials via electroabsorption measurements in a-Si:H p-i-n solar cells: a critical assessment', Mater. Res. Soc. Symp. Proc., 336, 365 (1994).
-
(1994)
Mater. Res. Soc. Symp. Proc.
, vol.336
, pp. 365
-
-
Wang, Q.1
Schiff, E.A.2
Hegedus, S.S.3
-
48
-
-
0030397222
-
Field collapse due to band-tail charge in amorphous silicon solar cells
-
IEEE, New York
-
Q. Wang, R. Crandall and E. Schiff, 'Field collapse due to band-tail charge in amorphous silicon solar cells', Conf. Rec. 25th IEEE Photovoltaic Specialist Conference, p. 1113, IEEE, New York, 1996.
-
(1996)
Conf. Rec. 25th IEEE Photovoltaic Specialist Conference
, pp. 1113
-
-
Wang, Q.1
Crandall, R.2
Schiff, E.3
|