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Volumn 5, Issue 3, 1997, Pages 151-168

Current-voltage analysis of a-Si and a-SiGe solar cells including voltage-dependent photocurrent collection

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; LIGHTING; MATHEMATICAL MODELS; PHOTODIODES; PHOTOELECTRICITY;

EID: 0031144871     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1099-159x(199705/06)5:3<151::aid-pip167>3.0.co;2-w     Document Type: Article
Times cited : (117)

References (48)
  • 1
    • 0019008112 scopus 로고
    • Design considerations for a-Si solar cells
    • V. Dalal, 'Design considerations for a-Si solar cells', IEEE Trans. Electron Devices, ED-27, 662 (1980).
    • (1980) IEEE Trans. Electron Devices , vol.ED-27 , pp. 662
    • Dalal, V.1
  • 3
    • 36549091084 scopus 로고
    • Physics of amorphous silicon alloy p-i-n solar cells
    • M. Hack and M. Shur, 'Physics of amorphous silicon alloy p-i-n solar cells', J. Appl. Phys., 58(2), 997 (1985).
    • (1985) J. Appl. Phys. , vol.58 , Issue.2 , pp. 997
    • Hack, M.1    Shur, M.2
  • 4
    • 33646561181 scopus 로고
    • Computer simulation model of the effects of interface states on high-performance amorphous silicon solar cells
    • H. Tasaki, W. Y. Kim, M. Hallerdt, M. Konagai and K. Takahashi, 'Computer simulation model of the effects of interface states on high-performance amorphous silicon solar cells', J. Appl. Phys., 63(2), 550 (1988).
    • (1988) J. Appl. Phys. , vol.63 , Issue.2 , pp. 550
    • Tasaki, H.1    Kim, W.Y.2    Hallerdt, M.3    Konagai, M.4    Takahashi, K.5
  • 5
    • 0001080366 scopus 로고
    • Computer analysis of the role of p-layer quality, thickness, transport mechanisms, and contact barrier height in the performance of hydrogenated amorphous silicon p-i-n solar cells
    • J. K. Arch, F. A., Rubinelli, J. Y. Hou and S. J. Fonash, 'Computer analysis of the role of p-layer quality, thickness, transport mechanisms, and contact barrier height in the performance of hydrogenated amorphous silicon p-i-n solar cells', J. Appl. Phys., 69(10), 7057 (1991).
    • (1991) J. Appl. Phys. , vol.69 , Issue.10 , pp. 7057
    • Arch, J.K.1    Rubinelli, F.A.2    Hou, J.Y.3    Fonash, S.J.4
  • 6
    • 0000786697 scopus 로고
    • Effects of abrupt and graded a-Si:C:H/a-Si:H interface on internal properties and external characteristics of p-i-n a-Si:H solar cells
    • F. Smole and J. Furlan, 'Effects of abrupt and graded a-Si:C:H/a-Si:H interface on internal properties and external characteristics of p-i-n a-Si:H solar cells', J. Appl. Phys., 72(12), 5964 (1992).
    • (1992) J. Appl. Phys. , vol.72 , Issue.12 , pp. 5964
    • Smole, F.1    Furlan, J.2
  • 8
    • 0020887639 scopus 로고
    • Modeling of thin film solar cells: Uniform field approximation
    • R. S. Crandall, 'Modeling of thin film solar cells: uniform field approximation', J. Appl. Phys., 54(12), 7176 (1983).
    • (1983) J. Appl. Phys. , vol.54 , Issue.12 , pp. 7176
    • Crandall, R.S.1
  • 9
    • 0021393772 scopus 로고
    • Determination of carrier collection length and prediction of fill factor in amorphous silicon solar cells
    • B. W. Faughnan and R. S. Crandall, 'Determination of carrier collection length and prediction of fill factor in amorphous silicon solar cells', Appl. Phys. Lett., 44, 537 (1984).
    • (1984) Appl. Phys. Lett. , vol.44 , pp. 537
    • Faughnan, B.W.1    Crandall, R.S.2
  • 10
    • 0001498409 scopus 로고
    • Amorphous silicon p-i-n solar cells with graded interface
    • R. R. Arya, A. Catalano and R. S. Oswald, 'Amorphous silicon p-i-n solar cells with graded interface', Appl. Phys. Lett., 49(17), 1089 (1986).
    • (1986) Appl. Phys. Lett. , vol.49 , Issue.17 , pp. 1089
    • Arya, R.R.1    Catalano, A.2    Oswald, R.S.3
  • 11
    • 1842792902 scopus 로고
    • Direct measurement of the mobility-lifetime product of holes and electrons in an amorphous silicon p-i-n cell
    • R. S. Crandall and K. Sadlon, 'Direct measurement of the mobility-lifetime product of holes and electrons in an amorphous silicon p-i-n cell', Mater. Res. Soc. Symp. Proc., 149, 423 (1989).
    • (1989) Mater. Res. Soc. Symp. Proc. , vol.149 , pp. 423
    • Crandall, R.S.1    Sadlon, K.2
  • 13
    • 0000240022 scopus 로고
    • Analytical and numerical modeling of amorphous silicon p-i-n solar cells
    • K. Misiakos and F. A. Lindholm, 'Analytical and numerical modeling of amorphous silicon p-i-n solar cells', J. Appl. Phys., 64, 383 (1988).
    • (1988) J. Appl. Phys. , vol.64 , pp. 383
    • Misiakos, K.1    Lindholm, F.A.2
  • 15
    • 0004793052 scopus 로고
    • Photocurrent collection in a Schottky barrier on an amorphous silicon-germanium alloy structure with 1.23 eV optical gap
    • V. Chu, J. P. Conde, D. S. Shen and S. Wagner, 'Photocurrent collection in a Schottky barrier on an amorphous silicon-germanium alloy structure with 1.23 eV optical gap', Appl. Phys. Lett., 55(3), 262 (1989).
    • (1989) Appl. Phys. Lett. , vol.55 , Issue.3 , pp. 262
    • Chu, V.1    Conde, J.P.2    Shen, D.S.3    Wagner, S.4
  • 16
    • 6244303806 scopus 로고    scopus 로고
    • personal communication, 8 October
    • R. Rocheleau, personal communication, 8 October 1996.
    • (1996)
    • Rocheleau, R.1
  • 18
    • 0001189338 scopus 로고
    • Dark current transport mechanism of p-i-n hydrogenated amorphous silicon diodes
    • H. Matsuura, A. Matsuda, H. Okushi and K. Tanaka, 'Dark current transport mechanism of p-i-n hydrogenated amorphous silicon diodes', J. Appl. Phys., 58(4), 1578 (1985).
    • (1985) J. Appl. Phys. , vol.58 , Issue.4 , pp. 1578
    • Matsuura, H.1    Matsuda, A.2    Okushi, H.3    Tanaka, K.4
  • 20
    • 36549099039 scopus 로고
    • The relation of dark and illuminated diode parameters to the open-circuit voltage of amorphous silicon p-i-n solar cells
    • S. S. Hegedus, N. Salzman and E. Fagen, 'The relation of dark and illuminated diode parameters to the open-circuit voltage of amorphous silicon p-i-n solar cells', J. Appl. Phys., 63(10), 5126 (1988).
    • (1988) J. Appl. Phys. , vol.63 , Issue.10 , pp. 5126
    • Hegedus, S.S.1    Salzman, N.2    Fagen, E.3
  • 23
    • 0025445581 scopus 로고
    • Analysis of apparent quantum efficiency
    • J. R. Sites, H. Tavakolian and R. A. Sasala, 'Analysis of apparent quantum efficiency', Sol. Cells, 29, 39 (1990).
    • (1990) Sol. Cells , vol.29 , pp. 39
    • Sites, J.R.1    Tavakolian, H.2    Sasala, R.A.3
  • 24
    • 0023596426 scopus 로고
    • A method for determining the conversion efficiency of multiple-cell photovoltaic devices
    • IEEE, New York
    • T. Glatfelter and J. Burdick, 'A method for determining the conversion efficiency of multiple-cell photovoltaic devices', Conf. Rec. 19th IEEE Photovoltaic Specialist Conference, p. 1187, IEEE, New York, 1987.
    • (1987) Conf. Rec. 19th IEEE Photovoltaic Specialist Conference , pp. 1187
    • Glatfelter, T.1    Burdick, J.2
  • 25
    • 0003610598 scopus 로고
    • Photoconductivity, trapping, and recombination in discharge-produced, hydrogenated amorphous silicon
    • C. R. Wronski and R. E. Daniel, 'Photoconductivity, trapping, and recombination in discharge-produced, hydrogenated amorphous silicon', Phys. Rev. B., 23(2), 794 (1981).
    • (1981) Phys. Rev. B. , vol.23 , Issue.2 , pp. 794
    • Wronski, C.R.1    Daniel, R.E.2
  • 26
    • 0004393975 scopus 로고
    • Photoconductivity and recombination in amorphous silicon alloys
    • M. Hack, S. Guha and M. Shur, 'Photoconductivity and recombination in amorphous silicon alloys', Phys. Rev. B, 30(12), 6991 (1984).
    • (1984) Phys. Rev. B , vol.30 , Issue.12 , pp. 6991
    • Hack, M.1    Guha, S.2    Shur, M.3
  • 27
    • 6244263755 scopus 로고
    • Stationary primary photocurrents for the characterization of a-Si:H pin-diodes
    • C. D. Abel, H. R. Paes and G. H. Bauer, 'Stationary primary photocurrents for the characterization of a-Si:H pin-diodes', Proc. 10th Eur. PVSEC, 1991, p. 161.
    • (1991) Proc. 10th Eur. PVSEC , pp. 161
    • Abel, C.D.1    Paes, H.R.2    Bauer, G.H.3
  • 28
    • 6244274108 scopus 로고
    • Steady-state mobility lifetimes and photoconductivity in a-SiGe:H thin films
    • S. S. Hegedus and J. M. Cebulka, 'Steady-state mobility lifetimes and photoconductivity in a-SiGe:H thin films', J. Appl. Phys., 67(8), 3885 (1990).
    • (1990) J. Appl. Phys. , vol.67 , Issue.8 , pp. 3885
    • Hegedus, S.S.1    Cebulka, J.M.2
  • 29
    • 0343589602 scopus 로고
    • Effect of low-level boron doping and its implication to the nature of gap states in hydrogenated amorphous silicon
    • Liyou Yang, A. Catalano, R. R. Arya and I. Balberg, 'Effect of low-level boron doping and its implication to the nature of gap states in hydrogenated amorphous silicon', Appl. Phys. Lett., 57(9), 908 (1990).
    • (1990) Appl. Phys. Lett. , vol.57 , Issue.9 , pp. 908
    • Yang, L.1    Catalano, A.2    Arya, R.R.3    Balberg, I.4
  • 30
    • 3943109262 scopus 로고
    • Effect of the dangling-bond charge on the ambipolar diffusion length in a-Si:H
    • E. Sauvain, J. Hubin, A. Shah and P. Pipoz, 'Effect of the dangling-bond charge on the ambipolar diffusion length in a-Si:H', Philos. Mag. Lett., 63(6), 327 (1991).
    • (1991) Philos. Mag. Lett. , vol.63 , Issue.6 , pp. 327
    • Sauvain, E.1    Hubin, J.2    Shah, A.3    Pipoz, P.4
  • 31
    • 0342344426 scopus 로고
    • Ambipolar diffusion length measurements in hydrogenated amorphous silicon
    • I. Balberg, K. A. Epstein and D. Ritter, 'Ambipolar diffusion length measurements in hydrogenated amorphous silicon', Appl. Phys. Lett., 54(24), 2461 (1989).
    • (1989) Appl. Phys. Lett. , vol.54 , Issue.24 , pp. 2461
    • Balberg, I.1    Epstein, K.A.2    Ritter, D.3
  • 33
    • 36749111025 scopus 로고
    • Collection efficiency of low-mobility solar cells
    • J. Reichman, 'Collection efficiency of low-mobility solar cells', Appl. Phys. Lett., 38(4), 251 (1981).
    • (1981) Appl. Phys. Lett. , vol.38 , Issue.4 , pp. 251
    • Reichman, J.1
  • 34
    • 4243798052 scopus 로고
    • Light-induced metastable defects in hydrogenated amorphous silicon
    • M. Stutzmann, W. Jackson and C. C. Tsai, 'Light-induced metastable defects in hydrogenated amorphous silicon', Phys. Rev. B, 32, 23 (1985).
    • (1985) Phys. Rev. B , vol.32 , pp. 23
    • Stutzmann, M.1    Jackson, W.2    Tsai, C.C.3
  • 35
    • 0000473771 scopus 로고
    • Stead-state photocarrier grating technique for diffusion-length measurement in semiconductors: Theory and experimental results for amorphous silicon and semi-insulating GaAs
    • D. Ritter, K. Weiser and E. Zeldov, 'Stead-state photocarrier grating technique for diffusion-length measurement in semiconductors: theory and experimental results for amorphous silicon and semi-insulating GaAs', J. Appl. Phys., 62(11), 4563 (1987).
    • (1987) J. Appl. Phys. , vol.62 , Issue.11 , pp. 4563
    • Ritter, D.1    Weiser, K.2    Zeldov, E.3
  • 36
    • 0028382946 scopus 로고
    • Dependence of the light-induced degradation kinetics of photoconductivity and ambipolar diffusion length as a function of doping level in a-Si:H
    • E. Sauvain, P. Pipoz, A. Shah and J. Hubin, 'Dependence of the light-induced degradation kinetics of photoconductivity and ambipolar diffusion length as a function of doping level in a-Si:H', J. Appl. Phys., 75(3), 1722 (1994).
    • (1994) J. Appl. Phys. , vol.75 , Issue.3 , pp. 1722
    • Sauvain, E.1    Pipoz, P.2    Shah, A.3    Hubin, J.4
  • 37
    • 0030563536 scopus 로고    scopus 로고
    • Stability of the mobility-lifetime product of holes in undoped a-Si:H under illumination
    • F. Wang and R. Schwarz, 'Stability of the mobility-lifetime product of holes in undoped a-Si:H under illumination', J. Non-Cryst. Solids, 198-200, 423 (1996).
    • (1996) J. Non-Cryst. Solids , vol.198-200 , pp. 423
    • Wang, F.1    Schwarz, R.2
  • 38
    • 84897676491 scopus 로고
    • Stability studies of hydrogenated amorphous silicon alloy solar cells prepared with hydrogen dilution
    • J. Yang, X. Xu and S. Guha, 'Stability studies of hydrogenated amorphous silicon alloy solar cells prepared with hydrogen dilution', Mater. Res. Soc. Symp. Proc., 336, 687 (1994).
    • (1994) Mater. Res. Soc. Symp. Proc. , vol.336 , pp. 687
    • Yang, J.1    Xu, X.2    Guha, S.3
  • 39
    • 6244250222 scopus 로고
    • Improvement of mobility-lifetime product of holes in a-SiGe:H alloys prepared with hydrogen dilution
    • P. Chaudhuri, A. R. Middya and S. Ray, 'Improvement of mobility-lifetime product of holes in a-SiGe:H alloys prepared with hydrogen dilution', Technical Digests of International PVSEC-6, 1992, p. 631.
    • (1992) Technical Digests of International PVSEC-6 , pp. 631
    • Chaudhuri, P.1    Middya, A.R.2    Ray, S.3
  • 42
    • 3643068782 scopus 로고
    • Diffusion lengths in a-SiGe:H and a-SiC:H alloys from optical grating technique
    • G. H. Bauer, C. R. Nebel and N.-D. Mohring, 'Diffusion lengths in a-SiGe:H and a-SiC:H alloys from optical grating technique', Mater. Res. Soc. Symp. Proc., 118, 679 (1988).
    • (1988) Mater. Res. Soc. Symp. Proc. , vol.118 , pp. 679
    • Bauer, G.H.1    Nebel, C.R.2    Mohring, N.-D.3
  • 43
    • 0021393225 scopus 로고
    • Relationship between collection length and diffusion length in amorphous silicon
    • A.
    • B. Faughnan, A. and R. Crandall, 'Relationship between collection length and diffusion length in amorphous silicon', Appl. Phys. Lett., 44(6), 613 (1984).
    • (1984) Appl. Phys. Lett. , vol.44 , Issue.6 , pp. 613
    • Faughnan, B.1    Crandall, R.2
  • 44
    • 0020767056 scopus 로고
    • Mobility-lifetime product and interface property in amorphous silicon solar cells
    • H. Okamoto, H. Kida, S. Nonomura, K. Fukumoto and Y. Hamakawa, 'Mobility-lifetime product and interface property in amorphous silicon solar cells', J. Appl. Phys., 54(6), 3236 (1983).
    • (1983) J. Appl. Phys. , vol.54 , Issue.6 , pp. 3236
    • Okamoto, H.1    Kida, H.2    Nonomura, S.3    Fukumoto, K.4    Hamakawa, Y.5
  • 45
    • 0027592572 scopus 로고
    • Dependence of open circuit voltage of amorphous silicon solar cells on thickness and doping level of the p-layer
    • M. Isomura, T. Takahama, S. Tsuda and S. Nakano, 'Dependence of open circuit voltage of amorphous silicon solar cells on thickness and doping level of the p-layer', Jpn. J. Appl. Phys., 32, 1902 (1993).
    • (1993) Jpn. J. Appl. Phys. , vol.32 , pp. 1902
    • Isomura, M.1    Takahama, T.2    Tsuda, S.3    Nakano, S.4
  • 46
    • 6244268885 scopus 로고    scopus 로고
    • Correlation of open circuit voltage with bandgap in amorphous silicon p-i-n solar cells
    • R. Crandall and E. Schiff, 'Correlation of open circuit voltage with bandgap in amorphous silicon p-i-n solar cells', AIP Conf. Proc., 353, 101 (1996).
    • (1996) AIP Conf. Proc. , vol.353 , pp. 101
    • Crandall, R.1    Schiff, E.2
  • 47
    • 84897583826 scopus 로고
    • Built-in potentials via electroabsorption measurements in a-Si:H p-i-n solar cells: A critical assessment
    • Q. Wang, E. A. Schiff and S. S. Hegedus, 'Built-in potentials via electroabsorption measurements in a-Si:H p-i-n solar cells: a critical assessment', Mater. Res. Soc. Symp. Proc., 336, 365 (1994).
    • (1994) Mater. Res. Soc. Symp. Proc. , vol.336 , pp. 365
    • Wang, Q.1    Schiff, E.A.2    Hegedus, S.S.3


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