Systematic control of hole-injection barrier height with electron acceptors in [7]phenacene single-crystal field-effect transistors

Journal of Physical Chemistry C

Volumn 118, Issue 10, 2014, Pages 5284-5293

  He, Xuexia ^a   Hamao, Shino ^a   Eguchi, Ritsuko ^a   Goto, Hidenori ^a   Yoshida, Yukihiro ^b   Saito, Gunzi ^b   Kubozono, Yoshihiro ^a  

^a OKAYAMA UNIVERSITY   (Japan)

^b MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARACTERIZATION; ELECTRODES; ELECTRONS; FIELD EFFECT TRANSISTORS; MATERIALS; REDOX REACTIONS; SCHOTTKY BARRIER DIODES; SECONDARY BATTERIES; THRESHOLD VOLTAGE; X RAY DIFFRACTION;

FIELD EFFECT TRANSISTOR (FETS); HOLE INJECTION BARRIERS; LINEAR RELATIONSHIPS; SCHOTTKY BARRIER HEIGHTS; SOURCE/DRAIN ELECTRODES; SYSTEMATIC CONTROL; TEMPERATURE DEPENDENCE; TUNNELING BARRIER;

SINGLE CRYSTALS;

EID: 84896387281     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp4107469     Document Type: Article

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