Straining graphene using thin film shrinkage methods

Nano Letters

Volumn 14, Issue 3, 2014, Pages 1158-1163

  Shioya, Hiroki ^a   Craciun, Monica F ^b   Russo, Saverio ^b   Yamamoto, Michihisa ^a   Tarucha, Seigo ^a,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF EXETER   (United Kingdom)

^c RIKEN Center for Emergent Matter Science   (Japan)

Author keywords

Graphene; planar process; Raman spectrum; shrinkage of thin films; strain engineering of two dimensional crystals; tensile and compressive strain

Indexed keywords

GRAPHENE; RAMAN SCATTERING; SHRINKAGE; THIN FILMS;

COMPRESSIVE STRAIN; ELECTRON BEAM IRRADIATION; MAGNETIC FIELD GENERATION; PLANAR PROCESS; RAMAN SPECTROSCOPY MEASUREMENTS; STRAIN ENGINEERING; STRETCHING DIRECTION; TWO-DIMENSIONAL CRYSTALS;

STRAIN;

EID: 84896342816     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl403679f     Document Type: Article

References (34)

1. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Katsnelson, M. I.; Grigorieva, I. V.; Dubonos, S. V.; Firsov, A. A. Two-dimensional gas of massless Dirac fermions in graphene Nature 2005, 438, 197-200
2. Zhang, Y.; Tan, Y.-W.; Stormer, H. L.; Kim, P. Experimental observation of the quantum Hall effect and Berry's phase in graphene Nature 2005, 438, 201-204
3. Meric, I.; Han, M. Y.; Young, A. F.; Özyilmaz, B.; Kim, P.; Shepard, K. L. Current saturation in zero-bandgap, top-gated graphene field-effect transistors Nat. Nanotechnol. 2008, 3, 654-659
4. Schwierz, F. Graphene transistors Nat. Nanotechnol. 2010, 5, 487-496
5. Kim, K.; Choi, J.-Y.; Kim, T.; Cho, S.-H.; Chung, H.-J., A role for graphene in silicon-based semiconductor devices. Naure 479, 338-344
6. Otsuji, T.; Tombet, S. A. B.; Satou, A.; Fukidome, H.; Suemitsu, M.; Sano, E.; Popov, V.; Ryzhii, M.; Ryzhii, V. Graphene-based devices in terahertz science and technology J. Phys. D: Appl. Phys. 2012, 45, 303001-303009
7. Craciun, M. F.; Russo, S.; Yamamoto, M.; Tarucha, S. Tuneable electronic properties in graphene Nano Today 2011, 6, 42-60
8. Shioya, H.; Yamamoto, M.; Russo, S.; Craciun, M. F.; Tarucha, S. Gate tunable non-linear currents in bilayer graphene diodes Appl. Phys. Lett. 2012, 100, 033113-033116
9. Guinea, F.; Katsnelson, M. I.; Geim, A. K. Energy gaps and a zero-field quantum Hall effect in graphene by strain engineering Nat. Phys. 2009, 6, 30-33
10. Pereira, V. M.; Castro Neto, A. H. Tight-binding approach to uniaxial strain in graphene Phys. Rev. B 2009, 80, 045401-045408
11. Ribeiro, R. M.; Pereira, V. M.; Peres, N. M. R.; Briddon, P. R.; Castro Neto, A. H. Strained graphene: tight-binding and density functional calculations New J. Phys. 2009, 11, 115002-115012
12. Montambaux, G.; Piechon, F.; Fuchs, J.-N.; Goerbig, M. O. Merging of Dirac points in a two-dimensional crystal Phys. Rev. B 2009, 80, 153412-153415
13. Pereira, V. M.; Castro Neto, A. H. Strain Engineering of Graphene's Electronic Structure Phys. Rev. Lett. 2009, 103, 046801-046804
14. Levy, N.; Burke, S. A.; Meaker, K. L.; Panlasigui, M.; Zettl, A.; Guinea, F.; Castro Neto, A. H.; Crommie, M. F. Strain-Induced Pseudo-Magnetic Fields Greater Than 300 T in Graphene Nanobubbles Science 2010, 329, 544-547
15. Lu, J.; Castro Neto, A. H.; Loh, K. P. Transforming moiré blisters into geometric graphene nano-bubbles Nat. Commun. 2012, 10. 1038/ncomms1818
16. Petrone, N.; Meric, I.; Hone, J.; Shepard, K. L. Graphene Field-Effect Transistors with Gigahertz-Frequency Power Gain on Flexible Substrates Nano Lett. 2013, 13, 121-125
17. Kim, K. S.; Zhao, Y.; Jang, H.; Lee, S. Y.; Kim, J. M.; Kim, K. S.; Ahn, J.-H.; Kim, P.; Choi, J.-Y.; Hong, B. H. Large-scale pattern growth of graphene films for stretchable transparent electrodes Nature 2009, 457, 706-710
18. Park, J. U.; Nam, S.; Lee, M.-S.; Lieber, C. M. Synthesis of monolithic graphene-graphite integrated electronics Nat. Mat. 2012, 11, 120-125
19. Lee, S.-K.; Kim, B. J.; Jang, H.; Yoon, S. C.; Lee, C.; Hong, B. H.; Rogers, J. A.; Cho, J. H.; Ahn, J.-H. Stretchable Graphene Transistors with Printed Dielectrics and Gate Electrodes Nano Lett. 2011, 11, 4642-4646
20. Lee, S.-K.; Jang, H. Y.; Jang, S.; Choi, E.; Hong, B. H.; Lee, J.; Park, S.; Ahn, J.-H. All Graphene-Based Thin Film Transistors on Flexible Plastic Substrates Nano Lett. 2012, 12, 3472-3476
21. Kim, B. J.; Jang, H.; Lee, S.-K.; Hong, B. H.; Ahn, J.-H.; Cho, J. H. High-performance Flexible Graphene Field Effect Transistors with Ion Gel Gate Dielectrics Nano Lett. 2010, 10, 3464-3466
22. Lu, C.-C.; Lin, Y.-C.; Yeh, C.-H.; Huang, J.-C.; Chiu, P.-W. High Mobility Flexible Graphene Field-Effect Transistors with Self-Healing Gate Dielectrics ACS Nano 2012, 6, 4469-4474
23. Ni, Z. H.; Yu, T.; Lu, Y. H.; Wang, Y. Y.; Feng, Y. P.; Shen, Z. X. Uniaxial Strain on Graphene: Raman Spectroscopy Study and Band-Gap Opening ACS Nano 2008, 2, 2301-2305
24. Mohiuddin, T. M. G.; Lombardo, A.; Nair, R. R.; Bonetti, A.; Savini, G.; Jalil, R.; Bonini, N.; Basko, D. M.; Galiotis, C.; Marzari, N.; Novoselov, K. S.; Geim, A. K.; Ferrari, A. C. Uniaxial strain in graphene by Raman spectroscopy: G peak splitting, Grüneisen parameters, and sample orientation Phys. Rev. B 2009, 79, 205433-205440
25. Tsoukleri, G.; Parthenios, J.; Papagelis, K.; Jalil, R.; Ferrari, A. C.; Geim, A. K.; Novoselov, K. S.; Galiotis, C. Subjecting a Graphene Monolayer to Tension and Compression Small 2009, 5, 2397-2402
26. Ferrari, A. C.; Meyer, J. C.; Scardaci, V.; Casiragi, C.; Lazzeri, M.; Mauri, F.; Piscanec, S.; Jiang, D.; Novoselov, K. S.; Roth, S.; Geim, A. K. Raman Spectrum of Graphene and Graphene Layers Phys. Rev. Lett. 2006, 97, 187401-187404
27. Romero, J. D.; Kahn, M.; Fatemi, H.; Turlo, J. Outgassing behavior of spin-on-glass (SOG) J. Mater. Res. 1991, 6, 1996-2003
28. Liu, F.; Ming, P.; Li, J. Ab initio calculation of ideal strength and phonon instability of graphene under tension Phys. Rev. B 2007, 76, 064120-064126
29. Lee, C.; Wei, X.; Kysar, J. W.; Hone, J. Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene Science 2008, 321, 385-388
30. Guinea, F. Strain engineering in graphene Solid State Commun. 2012, 152, 1437-1441
31. Lee, J. E.; Ahn, G.; Shim, J.; Lee, Y. S.; Ryu, S. Optical separation of mechanical strain from charge doping in graphene Nat. Commun. 2012, 3, 1024
32. Shen, X.; Wang, H.; Yu, T. How do the electron beam writing and metal deposition affect the properties of graphene during device fabrication? Nanoscale 2013, 5, 3352-3358
33. Blake, P.; Hill, E. W.; Castro Neto, A. H.; Novoselov, K. S.; Jiang, D.; Yang, R.; Booth, T. J.; Geim, A. K. Making graphene visible Appl. Phys. Lett. 2007, 91, 063124-063126
34. Koh, Y. K.; Bae, M.-H.; Cahill, D. G.; Pop, E. Reliably Counting Atomic Planes of Few-Layer Graphene (n > 4) ACS Nano 2011, 5, 269-274 Technology