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Physica B: Condensed Matter

Volumn 407, Issue 14, 2012, Pages 2825-2828

Low temperature electron transport in phosphorus-doped ZnO films grown on Si substrates

(7) Zhang, K a,b Hao, M R a Guo, W b Heeg, T c Schlom, D G c Shen, W Z a Pan, X Q b

a SHANGHAI JIAO TONG UNIVERSITY (China)

b UNIVERSITY OF MICHIGAN (United States)

c School of Operations Research and Industrial Engineering (United States)

Author keywords

Dislocation; Electron dephasing; Pulsed laser deposition; Zinc oxide

Indexed keywords

COULOMB SCATTERING; DEPHASING LENGTH; DISLOCATION DENSITIES; ELECTRON CONCENTRATION; ELECTRON DEPHASING; ELECTRON TRANSPORT; HIGHER TEMPERATURES; LOW TEMPERATURES; MAGNETO TRANSPORT PROPERTIES; MULTIBAND; PHOSPHORUS-DOPED ZNO; PHOTOLUMINESCENCE MEASUREMENTS; QUANTUM INTERFERENCE; SI SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE INDEPENDENCE; WEAK LOCALIZATION;

DISLOCATIONS (CRYSTALS); EDGE DISLOCATIONS; ELECTRON-ELECTRON INTERACTIONS; ELECTRONS; MAGNETIC FIELDS; METALLIC FILMS; PULSED LASER DEPOSITION; SILICON; TEMPERATURE; TRANSPORT PROPERTIES; X RAY DIFFRACTION; ZINC OXIDE;

PHOSPHORUS;

EID: 84861348078 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/j.physb.2012.04.036 Document Type: Conference Paper

Times cited : (4)

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