Piezoresistive effect in MoO3 nanobelts and its application in strain-enhanced oxygen sensors

Nano Research

Volumn 7, Issue 2, 2014, Pages 180-189

  Wen, Xiaonan ^a   Yang, Weiqing ^a,b   Ding, Yong ^a   Niu, Simiao ^a   Wang, Zhong Lin ^a,c  

^a Georgia Institute of Technology   (United States)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

molybdenum trioxide; nanobelt; oxygen sensor; piezoresistive effect

Indexed keywords

EID: 84894293281     PISSN: 19980124     EISSN: 19980000     Source Type: Journal    
DOI: 10.1007/s12274-013-0385-8     Document Type: Article

References (44)

1. King, R. B. Encyclopedia of Inorganic Chemistry. Wiley: Chichester; New York, 1994.
2. 3 nanobelts with greatly improved performance for lithium batteries. Adv. Mater. 2007, 19, 3712-3716.
3. Lee, S. H.; Kim, Y. H.; Deshpande, R.; Parilla, P. A.; Whitney, E.; Gillaspie, D. T.; Jones, K. M.; Mahan, A. H.; Zhang, S. B.; Dillon, A. C. Reversible lithium-ion insertion in molybdenum oxide nanoparticles. Adv. Mater. 2008, 20, 3627-3632.
4. Julien, C. M. Lithium intercalated compounds-Charge transfer and related properties. Mat. Sci. Eng. R2003, 40, 47-102.
5. Murugan, A. V.; Viswanath, A. K.; Gopinath, C. S.; Vijayamohanan, K. Highly efficient organic-inorganic poly(3, 4-ethylenedioxythiophene)-molybdenum trioxide nanocomposite electrodes for electrochemical supercapacitor. J. Appl. Phys. 2006, 100, 074319-1-074319-5.
6. 3 nanorod-based electrochemical energy storage devices. Electrochim. Acta2010, 56, 376-380.
7. Shakir, I.; Shahid, M.; Nadeem, M.; Kang, D. J. Tin oxide coating on molybdenum oxide nanowires for high performance supercapacitor devices. Electrochim. Acta2012, 72, 134-137.
8. Scarminio, J.; Lourenco, A.; Gorenstein, A. Electrochromism and photochromism in amorphous molybdenum oxide films. Thin Solid Films1997, 302, 66-70.
9. 3/Pt thin films. J. Phys. Chem. B1998, 102, 1856-1860.
10. 3 films and their application in electrochromic devices. Mat. Sci. Eng. B-Solid2005, 119, 232-239.
11. Zhou, J.; Xu, N. S.; Deng, S. Z.; Chen, J.; She, J. C.; Wang, Z. L. Large-area nanowire arrays of molybdenum and molybdenum oxides: Synthesis and field emission properties. Adv. Mater. 2003, 15, 1835-1840.
12. 3 nanobelts. Appl. Phys. Lett. 2002, 81, 5048-5050.
13. 3 nanostructures. J. Phys. Chem. C2007, 111, 2401-2408.
14. 3OH. Chem. Phys. Lett. 2005, 407, 368-371.
15. 3 thin film gas sensors for selective ammonia detection. Sensor Actuat. B-Chem. 2003, 93, 25-30.
16. Ferroni, M.; Guidi, V.; Martinelli, G.; Nelli, P.; Sacerdoti, M.; Sberveglieri, G. Characterization of a molybdenum oxide sputtered thin film as a gas sensor. Thin Solid Films1997, 307, 148-151.
17. 3 nanostructures on Au(111). Surf. Sci. 2008, 602, 1166-1174.
18. 3 via chemical etching at room temperature. J. Phys. Chem. B2000, 104, 11891-11898.
19. 3: Applications to tribological systems. Tribol. Lett. 2011, 42, 301-310.
20. 3 sheets by cutting, hydrogenation, and external strain: A computational investigation. Nanoscale2013, 5, 5321-5333.
21. Barlian, A. A.; Park, W. T.; Mallon, J. R.; Rastegar, A. J.; Pruitt, B. L. Review: Semiconductor piezoresistance for microsystems. P. IEEE2009, 97, 513-552.
22. Wei, T. Y.; Yeh, P. H.; Lu, S. Y.; Wang, Z. L. Gigantic enhancement in sensitivity using Schottky contacted nanowire nanosensor. J. Am. Chem. Soc. 2009, 131, 17690-17695.
23. 2 nanorods: Structure transformation and electrical transport. ACS Nano2009, 3, 478-482.
24. 3. Sensor Actuat. B-Chem. 2010, 145, 13-19.
25. 3. Sensor. Actuat. B-Chem. 2004, 101, 161-174.
26. 3: ZnO thin films and their mechanism of sensing. J. Mater. Chem. C2013, 1, 3976-3984.
27. Soutas-Little, R. W. Elasticity. Dover Publications: Mineola, NY, 1999; p xvi, p. 431.
28. Wang, Z. L. Piezopotential gated nanowire devices: Piezotronics and piezo-phototronics. Nano Today2010, 5, 540-552.
29. Wang, Z. L. ZnO nanowire and nanobelt platform for nanotechnology. Mat. Sci. Eng. R2009, 64, 33-71.
30. Wen, X. N.; Wu, W. Z.; Ding, Y.; Wang, Z. L. Piezotronic effect in flexible thin-film based devices. Adv. Mater. 2013, 25, 3371-3379.
31. Bao, M.-H. Analysis and design principles of MEMS devices. Elsevier: Amsterdam; Boston; London, 2005; pp 1 online resource (xii, p. 312).
32. Hull, R.; INSPEC (Information service), properties of crystalline silicon. In EMIS Data Reviews Series No. 20, INSPEC the Institution of Electrical Engineers: London, 1999; p 1 online resource (xxvi, p. 1016).
33. French, P. J.; Evans, A. G. R. Piezoresistance in polysilicon. Electron. Lett. 1984, 20, 999-1000.
34. French, P. J.; Evans, A. G. R. Piezoresistance in polysilicon and its applications to strain-gauges. Solid State Electron1989, 32, 1-10.
35. He, R. R.; Yang, P. D. Giant piezoresistance effect in silicon nanowires. Nat. Nanotechnol. 2006, 1, 42-46.
36. Reck, K.; Richter, J.; Hansen, O.; Thomsen, E. V. Piezoresistive effect in top-down fabricated silicon nanowires. MEMS 2008: 21st IEEE International Conference on Micro Electro Mechanical Systems, Technical Digest2008, 717-720.
37. Ivanov, T.; Gotszalk, T.; Sulzbach, T.; Rangelow, I. W. Quantum size aspects of the piezoresistive effect in ultra thin piezoresistors. Ultramicroscopy2003, 97, 377-384.
38. Hosseinzadegan, H.; Todd, C.; Lal, A.; Pandey, M.; Levendorf, M.; Park, J. Graphene has ultra high piezoresistive gauge factor. 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems (MEMS)2012.
39. 3 microrods. J. Phys. Chem. B2006, 110, 119-124.
40. Mai, L. Q.; Yang, F.; Zhao, Y. L.; Xu, X.; Xu, L.; Hu, B.; Luo, Y. Z.; Liu, H. Y. Molybdenum oxide nanowires: Synthesis and properties. Mater. Today2011, 14, 346-353.
41. Kolmakov, A.; Moskovits, M. Chemical sensing and catalysis by one-dimensional metal-oxide nanostructures. Annu. Rev. Mater. Res. 2004, 34, 151-180.
42. 2 with oxygen. J. Catal. 2002, 210, 67-83.
43. Singh, P.; Park, W. T.; Miao, J. M.; Shao, L. C.; Kotlanka, R. K.; Kwong, D. L. Tunable piezoresistance and noise in gate-all-around nanowire field-effect-transistor. Appl. Phys. Lett. 2012, 100.
44. Singh, P.; Miao, J. M.; Pott, V.; Park, W. T.; Kwong, D. L. Piezoresistive sensing performance of junctionless nanowire FET. IEEE Electr. Device L. 2012, 33, 1759-1761.