Quantum size aspects of the piezoresistive effect in ultra thin piezoresistors

Ultramicroscopy

Volumn 97, Issue 1-4, 2003, Pages 377-384

  Ivanov, Tzv ^a   Gotszalk, T ^b   Sulzbach, T ^c   Rangelow, I W ^a  

^a UNIVERSITY OF KASSEL   (Germany)

^b WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^c NANOWORLD SERVICES GMBH   (Germany)

Author keywords

AFM; MOSFET; Piezoresistive effect

Indexed keywords

BAND STRUCTURE; MOSFET DEVICES; READOUT SYSTEMS; SENSORS; SILICON;

PIEZORESISTORS;

QUANTUM THEORY;

METAL OXIDE; SILICON;

APPARATUS; ARTICLE; CALCULATION; COMPARATIVE STUDY; DEVICE; MATERIALS; MATHEMATICAL MODEL; PIEZOELECTRICITY; QUANTUM MECHANICS; SEMICONDUCTOR;

EID: 0037865574     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-3991(03)00064-0     Document Type: Article

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