Plasma-based chemical modification of epitaxial graphene with oxygen functionalities

Surface and Coatings Technology

Volumn 241, Issue , 2014, Pages 8-12

  Hernandez S C ^a   Wheeler, V D ^a   Osofsky, M S ^a   Jernigan, G G ^a   Nagareddy, V K ^b   Nath, A ^c   Lock, E H ^a   Nyakiti, L O ^a   Myers Ward, R L ^a   Sridhara, K ^d   Horsfall, A B ^c   Eddy, C R ^a   Gaskill, D K ^a   Walton, S G ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b NEWCASTLE UNIVERSITY   (United Kingdom)

^c Krasnow Institute for Advanced Study   (United States)

^d UNIVERSITY OF MARYLAND   (United States)

Author keywords

Electrical characterization; Functionalization; Graphene; Hall effect; Plasma modification

Indexed keywords

EID: 84894086727     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2013.11.015     Document Type: Article

References (55)

1. Lee J.M., Choung J.W., Yi J., Lee D.H., Samal M., Yi D.K., Lee C.H., Yi G.C., Paik U., Rogers J.A., Park W.I. Nano Lett. 2010, 10:2783-2788.
2. Lin Y.M., Dimitrakopoulos C., Jenkins K.A., Farmer D.B., Chiu H.Y., Grill A., Avouris P. Science 2010, 327:662.
3. Tombros N., Jozsa C., Popinciuc M., Jonkman H.T., van Wees B.J. Nature 2007, 448:571-575.
4. Cho S.J., Chen Y.F., Fuhrer M.S. Appl. Phys. Lett. 2007, 91.
5. De Arco L.G., Zhang Y., Schlenker C.W., Ryu K., Thompson M.E., Zhou C.W. ACS Nano 2010, 4:2865-2873.
6. Wu J.B., Becerril H.A., Bao Z.N., Liu Z.F., Chen Y.S., Peumans P. Appl. Phys. Lett. 2008, 92.
7. Schedin F., Geim A.K., Morozov S.V., Hill E.W., Blake P., Katsnelson M.I., Novoselov K.S. Nat. Mater. 2007, 6:652-655.
8. Geim A.K., Novoselov K.S. Nat. Mater. 2007, 6:183-191.
9. Novoselov K.S., Geim A.K., Morozov S.V., Jiang D., Zhang Y., Dubonos S.V., Grigorieva I.V., Firsov A.A. Science 2004, 306:666-669.
10. Service R.F. Science 2009, 324:875-877.
11. Hummers W.S., Offeman R.E. J. Am. Chem. Soc. 1958, 80:1339.
12. McAllister M.J., Li J.L., Adamson D.H., Schniepp H.C., Abdala A.A., Liu J., Herrera-Alonso M., Milius D.L., Car R., Prud'homme R.K., Aksay I.A. Chem. Mater. 2007, 19:4396-4404.
13. HAss J., Feng R., Li T., Zong Z., de Heer W.A., First P.N., Conrad E.H., Jeffrey C.A., Berger C. Appl. Phys. Lett. 2006, 89:1431061-1431063.
14. Rollings E., Gweon G.H, Zhou S.Y., Mun B.S., McChesney J.L., Hussain B.S., Fedorov A.V., First P.N., de Heer W.A., Lanzara A. J. Phys. Chem. Solids 2006, 67:2171-2177.
15. Aristov V.Y., Urbanik G., Kummer K., Vyalikh D.V., Molodtsova O.V., Preobrajenski A.B., Zakharov A.A., Hess C., Hanke T., Buchner B., Vobornik I., Fujii J., Panaccione G., Ossipyan Y.A., Knupfer M. Nano Lett. 2011, 10:992-995.
16. Berger C., Song Z., Li X., Wu X., Brown N., Naud C., Mayou D., Li T., Hass J., Marchenkov A.N., Conrad E.H., First P.N., de Heer W.A. Science 2006, 312:1191-1196.
17. Curtin A.E., Fuhrer M.S., Tedesco J.L., Myers-Ward R.L., Eddy C.R., Gaskill D.K. Appl. Phys. Lett. 2011, 98.
18. Geim A.K. Science 2009, 324:1530-1534.
19. Hite J.K., Twigg M.E., Tedesco J.L., Friedman A.L., Myers-Ward R.L., Eddy C.R., Gaskill D.K. Nano Lett. 2012, 11:1190-1194.
20. Moon J.S., Curtis D., Bui S., Hu M., Gaskill D.K., Tedesco J.L., Asbeck P., Jernigan G.G., VanMil B.L., Myers-Ward R.L., Eddy C.R., Campbell P.M., Weng X. IEEE Electron Device Lett. 2010, 31:260-262.
21. Moon J.S., Seo H.C., Stratan F., Antckiffe M., Schmitz A., Ross R.S., Kiselev A.A., Wheeler V.D., Nyakiti L.O., Gaskill D.K., Lee K.M., Asbeck P.M. IEEE Electron Device Lett. 2013, 34:1190-1192.
22. Guan L., Cui L., Lin K., Wang Y.Y., Wang X.T., Jin F.M., He F., Chen X.P., Cui S. Appl. Phys. A: Mater. Sci. Process. 2013, 102:289-294.
23. Sofo J.O., Suarez A.M., Usaj G., Cornaglia P.S., Hernandez-Nieves A.D., Balseiro C.A. Phys. Rev. B 2011, 83.
24. Wu X.M., Cao H.Q., Li B.J., Yin G. Nanotechnology 2012, 22.
25. Wang Y., Guo C.X., Wang X., Guan C., Yang H.B., Wang K.A., Li C.M. Energy Environ. Sci. 2011, 4:195-200.
26. Wang Y., Yao H.B., Wang X.H., Yu S.H. J. Mater. Chem. 2011, 21:562-566.
27. Yuchen X., Jian-guo L., Yong Z, Wenming L., Jian G., Yun X., Ying Y., Zhigang Z. J. Power Sources 2012, 1012-1018.
28. Guan L., Cui L., Lin K., Wang Y.Y., Wang X.T., Jin F.M., He F., Chen X.P., Cui S. Appl. Phys. A: Mater. Sci. Process 2012, 289-294.
29. Liu X.W., Mao J.J., Liu P.D., Wei X.W. Carbon 2011, 49:477-483.
30. Zhang K., Yue Q.L., Chen G.F., Zhai Y.L., Wang L., Wang H.S., Zhao J.S., Liu J.F., Jia J.B., Li H.B., Phys J. Chem. C 2011, 115:379-389.
31. Zhao H., Yang J., Wang L., Tian C.G., Jiang B.J., Fu H.G. Chem. Commun. 2011, 47:2014-2016.
32. Baraket M., Walton S.G., Lock E.H., Robinson J.T., Perkins F.K. Appl. Phys. Lett. 2011, 96.
33. Baraket M., Walton S.G., Wei Z., Lock E.H., Robinson J.T., Sheehan P. Carbon 2011, 48:3382-3390.
34. Tedesco J.L., Jernigan G.G., Culbertson J.C., Hite J.K., Yang Y., Daniels K.M., Myers-Ward R.L., Eddy C.R., Robinson J.A., Trumbull K.A., Wetherington M.T., Campbell P.M., Gaskill D.K. Appl. Phys. Lett. 2010, 96.
35. Kato T., Jiao L., Wang X., Wang H., Li X., Zhang L., Hatakeyama R., Dai H. Small 2011, 7:574-577.
36. Nourbakhsh A., Cantoro M., Vosch T., Pourtois G., Clemente F., van der Veen M.H., Hofkens J., Heyns M.M., De Gendt S., Sels B.F. Nanotechnology 2010, 21:4352031-4352039.
37. Garces N.Y., Wheeler V.D., Hite J.K., Jernigan G.G., Tedesco J.L., Nepal N., Eddy C.R., Gaskill D.K. J. Appl. Phys. 2012, 109.
38. Rafiee J., Rafiee M.A., Yu Z.Z., Koratkar N. Adv. Mater. 2010, 22:2151-2154.
39. Baraket M., Stine R., Lee W.K., Robinson J.T., Tamanaha C.R., Sheehan P.E., Walton S.G. Appl. Phys. Lett. 2012, 100.
40. Nagareddy V.K., Chan H.K., Hernandez S.C., Wheeler V.D., Myers-Ward R.L., Nyakiti L.O., Eddy C.R., Walton S.G., Goss J.P., Wright N.G., Gaskill D.K., Horsfall A.B. Appl. Phys. Lett. 2013, 102.
41. Baraket M., Walton S.G., Lock E.H., Robinson J.T., Perkins F.K. Appl. Phys. Lett. 2010, 96.
42. Hernández S.C., Bennett C.J.C., Junkermeier C.E., Tsoi S.D., Bezares F.J., Stine R., Robinson J.T., Lock E.H., Boris D.R., Pate B.D., Caldwell J.D., Reinecke T.L., Sheehan P.E., Walton S.G. ACS Nano 2013, 4746-4755.
43. Hernández S.C., Bezares F.J., Robinson J.T., Caldwell J.D., Walton S.G. Carbon 2013, 60:84-93.
44. Nagareddy V.K., Goss J.P., Wright N.G., Horsfall A.B., Hernandez S.C., Wheeler V.D., Nyakiti L.O., Myers-Ward R.L., Eddy C.R., Walton S.G., Gaskill D.K. 2012 IEEE Sensors 2013, (4pp.-4pp.).
45. Jernigan G.G., VanMil B.L., Tedesco J.L., Tischler J.G., Glaser E.R., Davidson A., Campbell P.M., Gaskill D.K. Nano Lett. 2009, 9:2605-2609.
46. Emtsev K.V., Speck F., Seyller T., Ley L., Riley J.D. Phys. Rev. B 2008, 77.
47. Speck F., Ostler M., Rohrl J., Emtsev K.V., Hundhausen M., Ley L., Seyller T. Phys. Status Solidi C Curr. Top. Solid State Phys. 2010, 7(2):398-401. 7.
48. Walton S.G., Lock E.H., Ni A., Baraket M., Fernsler R.F., Pappas D.D., Strawhecker K.E., Bujanda A.A. J. Appl. Polym. Sci. 2010, 117:3515-3523.
49. Junkermeier C.E., Solenov D., Reinecke T.L. J. Phys. Chem. C 2013, 117:2793-2798.
50. Hundhausen M., Pusche R., Rohrl J., Ley L. Phys. Status Solidi B Basic Solid State Phys. 2008, 245:1356-1368.
51. Ferrari A.C., Kleinsorge B., Adamopoulos G., Robertson J., Milne W.I., Stolojan V., Brown L.M., LiBassi A., Tanner B.K. J. Non-Cryst. Solids 2000, 266:765-768.
52. Ferrari A.C., Meyer J.C., Scardaci V., Casiraghi C., Lazzeri M., Mauri F., Piscanec S., Jiang D., Novoselov K.S., Roth S., Geim A.K. Phys. Rev. Lett. 2006, 97.
53. Niyogi S., Bekyarova E., Hong J., Khizroev S., Berger C., de Heer W., Haddon R.C. J. Phys. Chem. Lett. 2011, 2:2487-2498.
54. Das A., Pisana S., Chakraborty B., Piscanec S., Saha S.K., Waghmare U.V., Novoselov K.S., Krishnamurthy H.R., Geim A.K., Ferrari A.C., Sood A.K. Nat. Nanotechnol. 2008, 3:210-215.
55. Yan J., Zhang Y.B., Kim P., Pinczuk A. Phys. Rev. Lett. 2007, 98.