Atomic layer deposited aluminum oxide films on graphite and graphene studied by XPS and AFM

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 2, 2010, Pages 398-401

  Speck, Florian ^a   Ostler, Markus ^a   R̈ohrl, Jonas ^a   Emtsev, Konstantin V ^a   Hundhausen, Martin ^a   Ley, Lothar ^a   Seyller, Thomas ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; ALUMINUM OXIDE FILMS; ALUMINUM OXIDES; ATOMIC LAYER DEPOSITED; EPITAXIAL GRAPHENE; FIELD-EFFECT DEVICES; GATE INSULATOR; HIGHER TEMPERATURES; HIGHLY ORIENTED PYROLYTIC GRAPHITE; NUCLEATION CENTER; OXIDE LAYER; OZONE EXPOSURES; PROCESS PARAMETERS; PROMISING MATERIALS; SOLID-STATE DECOMPOSITION; XPS;

ALUMINUM; ALUMINUM COATINGS; ATOMIC FORCE MICROSCOPY; ATOMIC LAYER DEPOSITION; ATOMIC SPECTROSCOPY; ATOMS; GRAPHENE; GRAPHITE; LEAD OXIDE; NANOSCIENCE; NUCLEATION; OZONE; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTOR GROWTH; SILICON CARBIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

OXIDE FILMS;

EID: 77954347445     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982496     Document Type: Conference Paper

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