Ptsi clustering in silicon probed by transport spectroscopy

Physical Review X

Volumn 3, Issue 4, 2014, Pages

  Mongillo, Massimo ^a,d   Spathis, Panayotis ^a   Katsaros, Georgios ^a   De Franceschi, Silvano ^a   Gentile, Pascal ^a   Rurali, Riccardo ^b   Cartoixà, Xavier ^c  

^a UNIV GRENOBLE ALPES   (France)

^b INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

^c UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^d CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC SIMULATIONS; CHARACTERISTIC SIZE; CONTACT MATERIAL; DISCRETE ENERGIES; QUANTUM TRANSPORT; SCHOTTKY BARRIERS; THERMAL ANNEALING PROCESS; TRANSPORT SPECTROSCOPY;

MICROELECTRONICS; QUANTUM ELECTRONICS; SCANNING TUNNELING MICROSCOPY;

SILICIDES;

EID: 84893652127     PISSN: None     EISSN: 21603308     Source Type: Journal    
DOI: 10.1103/PhysRevX.3.041025     Document Type: Article

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