Effects of film thickness and deposition rate on the diffusion barrier performance of titanium nitride in Cu-through silicon vias

Electronic Materials Letters

Volumn 10, Issue 1, 2014, Pages 275-279

  Lee, Young Joo ^a   Yeon, Han Wool ^a   Jung, Sung Yup ^a   Na, Se Kwon ^b   Park, Jong Seung ^c   Choi, Yong Yoon ^c   Lee, Hoo Jeong ^b   Song, Oh Sung ^d   Joo, Young Chang ^a  

^a Seoul National University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Seoul National University   (South Korea)

^d University of Seoul   (South Korea)

Author keywords

Cu interconnects; diffusion barrier; microstructure; titanium nitride

Indexed keywords

COPPER; DEPOSITION RATES; DIFFUSION BARRIERS; ELECTRONICS PACKAGING; FILM THICKNESS; INTEGRATED CIRCUIT INTERCONNECTS; METALLIC FILMS; MICROSTRUCTURE; MORPHOLOGY; SILICON; THREE DIMENSIONAL INTEGRATED CIRCUITS;

AMORPHOUS STRUCTURES; BARRIER PERFORMANCE; COLUMNAR GROWTH; CU-INTERCONNECTS; RAPID DIFFUSION; THROUGH SILICON VIAS; TIN FILMS;

TITANIUM NITRIDE;

EID: 84893386057     PISSN: 17388090     EISSN: 20936788     Source Type: Journal    
DOI: 10.1007/s13391-013-3108-0     Document Type: Article

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