Electrical characteristics and thermal shock properties of Cu-filled TSV prepared by laser drilling

Electronic Materials Letters

Volumn 9, Issue 4, 2013, Pages 389-392

  Jeong, Il Ho ^a,b   Jung, Do Hyun ^a   Shin, Kyu Sik ^a   Shin, Dong Sik ^c   Jung, Jae Pil ^a  

^a University of Seoul   (South Korea)

^b Defense Agency for Technology and Quality   (South Korea)

^c Korea Institute of Machine and Materials   (South Korea)

Author keywords

electrical analysis; thermal shock test; TSV

Indexed keywords

CHARACTERISTIC IMPEDANCE; ELECTRICAL ANALYSIS; ELECTRICAL CHARACTERISTIC; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; IMPEDANCE ANALYZER; THERMAL SHOCK PROPERTIES; THROUGH-SILICON-VIA (TSV); TSV;

SCANNING ELECTRON MICROSCOPY; SILICON; SILICON WAFERS; THERMAL SHOCK; THREE DIMENSIONAL;

ELECTRIC PROPERTIES;

EID: 84880445463     PISSN: 17388090     EISSN: 20936788     Source Type: Journal    
DOI: 10.1007/s13391-013-0006-4     Document Type: Article

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