SiC JFET cascode loss dependency on the MOSFET output capacitance and performance comparison with Trench IGBTs

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Volumn , Issue , 2013, Pages 1287-1293

  Pittini, Riccardo ^a   Zhang, Zhe ^a   Andersen, Michael A E ^a  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

CONVENTIONAL ENERGY SOURCES; DATA POST-PROCESSING; EXPERIMENTAL ANALYSIS; GALLIUM NITRIDES (GAN); LABORATORY MEASUREMENTS; PERFORMANCE COMPARISON; SILICON CARBIDES (SIC); SWITCHING PERFORMANCE;

CAPACITANCE; ENERGY DISSIPATION; GALLIUM NITRIDE; POWER ELECTRONICS; SILICON CARBIDE; SWITCHING;

MOSFET DEVICES;

EID: 84879339925     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APEC.2013.6520465     Document Type: Conference Paper

References (11)

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