Comparison of reverse recovery behavior of silicon and wide bandgap diodes in high frequency power converters

2013 IEEE 14th Workshop on Control and Modeling for Power Electronics, COMPEL 2013

Volumn , Issue , 2013, Pages

  Costinett, Daniel ^a   Maksimovic, Dragan ^a   Zane, Regan ^b   Rodriguez, Alberto ^c   Vazquez, Aitor ^c  

^a University of Colorado at Boulder   (United States)

^b Utah State University   (United States)

^c UNIVERSITY OF OVIEDO   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BOOST CONVERTER; GALLIUM NITRIDES (GAN); HIGH FREQUENCY POWER CONVERTER; REVERSE RECOVERY; SILICON CARBIDES (SIC); SOFT-SWITCHED CONVERTERS; SWITCHING LOSS; ZERO-CURRENT SWITCHING;

GALLIUM NITRIDE; POWER ELECTRONICS; RECOVERY; SILICON; SILICON CARBIDE; SOFT SWITCHING;

DIODES;

EID: 84889023648     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/COMPEL.2013.6626466     Document Type: Conference Paper

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