A new, universal and fast switching gate-drive-concept for SiC-JFETs based on current source principle

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn , Issue , 2006, Pages

  Domes, Daniel ^a   Werner, Ralf ^b   Hofmann, Wilfried ^a   Domes, Konrad ^c   Krauß, Sebastian ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF APPLIED SCIENCES MITTWEIDA   (Germany)

^c Engineering Office Konrad Domes   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC DRIVES; ELECTRIC POTENTIAL; SILICON CARBIDE; TOPOLOGY;

BREAK-THROUGH VOLTAGES; FAST SWITCHING GATE-DRIVE; MATRIX CONVERTER; VOLTAGE SOURCE INVERTER;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 42449101717     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.2006.1712169     Document Type: Conference Paper

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