High temperature (>200°C) isolated gate drive topologies for Silicon Carbide (SiC) JFET

IECON Proceedings (Industrial Electronics Conference)

Volumn , Issue , 2008, Pages 2867-2872

  Waffler, S ^a   Round, S D ^a   Kolar, J W ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

AUTOMOBILE DRIVERS; AUTOMOBILE ELECTRONIC EQUIPMENT; AUTOMOBILE PARTS AND EQUIPMENT; DRIVES; ELECTRIC CONDUCTIVITY; HYBRID SYSTEMS; INDUSTRIAL ELECTRONICS; POWER ELECTRONICS; PROPULSION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR MATERIALS; SILICON CARBIDE;

AMBIENT TEMPERATURES; CIRCUIT COMPLEXITY; COST EFFECTIVES; DC - DC CONVERTERS; DRIVER OUTPUTS; DYNAMIC PERFORMANCE; EXCELLENT PERFORMANCE; GATE DRIVERS; GATE DRIVES; HIGH TEMPERATURES; HYBRID ELECTRICAL VEHICLES; LOW TEMPERATURES; PERFORMANCE COMPARISONS; PHASE DIFFERENCES; POWER DENSITIES; POWER SEMICONDUCTORS; PROPULSION SYSTEMS; ROOM TEMPERATURES; SEMICONDUCTOR TECHNOLOGIES; SWITCHING SPEED; SWITCHING TESTS; WEIGHT LIMITATIONS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 63149144638     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IECON.2008.4758414     Document Type: Conference Paper

References (10)

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