Enhanced solar-blind responsivity of photodetectors based on cubic MgZnO films via gallium doping

Optics Express

Volumn 22, Issue 1, 2014, Pages 246-253

  Xie, Xiuhua ^a,b   Zhang, Zhenzhong ^a   Li, Binghui ^a   Wang, Shuangpeng ^a   Jiang, Mingming ^a   Shan, Chongxin ^a   Zhao, Dongxu ^a   Chen, Hongyu ^a,b   Shen, Dezhen ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEPLETION REGION; ELECTRIC FIELD INTENSITIES; GALLIUM DOPING; MAGNITUDE ENHANCEMENT; METAL ORGANIC; N-TYPE CONDUCTION; RESPONSIVITY; SOLAR-BLIND;

ELECTRIC FIELDS; GALLIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTODETECTORS; PHOTONS;

SEMICONDUCTOR DOPING;

GALLIUM; MAGNESIUM OXIDE; ZINC OXIDE;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; EQUIPMENT FAILURE; LIGHT; MATERIALS TESTING; PHOTOMETRY; RADIATION DOSE; RADIATION EXPOSURE; SEMICONDUCTOR; SOLAR ENERGY;

EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; LIGHT; MAGNESIUM OXIDE; MATERIALS TESTING; MEMBRANES, ARTIFICIAL; PHOTOMETRY; RADIATION DOSAGE; SEMICONDUCTORS; SOLAR ENERGY; ZINC OXIDE;

EID: 84892647248     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.22.000246     Document Type: Article

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