메뉴 건너뛰기




Volumn 26, Issue 2, 2014, Pages 138-141

A simple passivation technique for AlGaN/GaN ultraviolet schottky barrier photodetector

Author keywords

AlGaN GaN; H2O2; passivation; photodetector; ultraviolet

Indexed keywords

ALGAN/GAN; H2O2; NOISE EQUIVALENT POWER; PASSIVATION PROCESS; REJECTION RATIOS; SCHOTTKY BARRIERS; ULTRA-VIOLET PHOTODETECTORS; ULTRAVIOLET;

EID: 84892595497     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2013.2290130     Document Type: Article
Times cited : (29)

References (19)
  • 1
    • 84866923247 scopus 로고    scopus 로고
    • 1.4-kV breakdown voltage for AlGaN/GaN high-electron-mobility transistors on silicon substrate
    • Oct.
    • S. L. Selvaraj, A. Watanabe, A. Wakejima, and T. Egawa, "1.4-kV breakdown voltage for AlGaN/GaN high-electron-mobility transistors on silicon substrate," IEEE Electron Device Lett., vol. 33, no. 10, pp. 1375-1377, Oct. 2012.
    • (2012) IEEE Electron Device Lett. , vol.33 , Issue.10 , pp. 1375-1377
    • Selvaraj, S.L.1    Watanabe, A.2    Wakejima, A.3    Egawa, T.4
  • 2
    • 33846419131 scopus 로고    scopus 로고
    • High-breakdown-voltage pn-junction diodes on GaN substrates
    • DOI 10.1016/j.jcrysgro.2006.10.246, PII S0022024806011250
    • Y. Yoshizumi, S. Hashimoto, T. Tanabe, and M. Kiyama, "High-breakdown-voltage pn-junction diodes on GaN substrates," J. Cryst. Growth, vol. 298, pp. 875-878, Jan. 2007. (Pubitemid 46149783)
    • (2007) Journal of Crystal Growth , vol.298 , Issue.SPEC. ISSUE , pp. 875-878
    • Yoshizumi, Y.1    Hashimoto, S.2    Tanabe, T.3    Kiyama, M.4
  • 3
    • 38549137284 scopus 로고    scopus 로고
    • Highperformance visible-blind GaN-based p-i-n photodetectors
    • Jan.
    • B. Butun, T. Tut, E. Ulker, T. Yelboga, and E. Ozbay, "Highperformance visible-blind GaN-based p-i-n photodetectors," Appl. Phys. Lett., vol. 92, no. 3, pp. 033507-1-033507-3, Jan. 2008.
    • (2008) Appl. Phys. Lett. , vol.92 , Issue.3 , pp. 0335071-0335073
    • Butun, B.1    Tut, T.2    Ulker, E.3    Yelboga, T.4    Ozbay, E.5
  • 4
    • 84870567657 scopus 로고    scopus 로고
    • Bias-selective dual-operation-mode ultraviolet Schottky-barrier photodetectors fabricated on high-resistivity homoepitaxial GaN
    • Dec. 15
    • F. Xie, H. Lu, D. J. Chen, F. F. Ren, R. Zhang, and Y. D. Zheng, "Bias-selective dual-operation-mode ultraviolet Schottky-barrier photodetectors fabricated on high-resistivity homoepitaxial GaN," IEEE Photon. Technol. Lett., vol. 24, no. 24, pp. 2203-2205, Dec. 15, 2012.
    • (2012) IEEE Photon. Technol. Lett. , vol.24 , Issue.24 , pp. 2203-2205
    • Xie, F.1    Lu, H.2    Chen, D.J.3    Ren, F.F.4    Zhang, R.5    Zheng, Y.D.6
  • 5
    • 48949098163 scopus 로고    scopus 로고
    • GaN membrane metal-semiconductor-metal ultraviolet photodetector
    • Apr.
    • A. Müller, et al., "GaN membrane metal-semiconductor-metal ultraviolet photodetector," Appl. Opt., vol. 47, no. 10, pp. 1453-1456, Apr. 2008.
    • (2008) Appl. Opt. , vol.47 , Issue.10 , pp. 1453-1456
    • Müller, A.1
  • 6
    • 79959442506 scopus 로고    scopus 로고
    • Highperformance GaN metal-insulator-semiconductor ultraviolet photodetec-tors using gallium oxide as gate layer
    • Jun.
    • M. L. Lee, T. S. Mue, F. W. Huang, J. H. Yang, and J. K. Sheu, "Highperformance GaN metal-insulator-semiconductor ultraviolet photodetec-tors using gallium oxide as gate layer," Opt. Express, vol. 19, no. 13, pp. 12658-12663, Jun. 2011.
    • (2011) Opt. Express , vol.19 , Issue.13 , pp. 12658-12663
    • Lee, M.L.1    Mue, T.S.2    Huang, F.W.3    Yang, J.H.4    Sheu, J.K.5
  • 7
    • 0036476514 scopus 로고    scopus 로고
    • Inductively coupled plasma-induced damage in AlGaN/GaN HEMTs
    • DOI 10.1149/1.1430363
    • F. A. Khan, V. Kumar, and I. Adesida, "Inductively coupled plasma-induced damage in AlGaN/GaN HEMT," Electrochem. Solid State Lett., vol. 5, no. 2, pp. G8-G9, Feb. 2002. (Pubitemid 34295142)
    • (2002) Electrochemical and Solid-State Letters , vol.5 , Issue.2
    • Khan, F.A.1    Kumar, V.2    Adesida, I.3
  • 8
    • 33747145573 scopus 로고    scopus 로고
    • 2 passivation layer on the properties of AlGaN/GaN heterostructure photodiode
    • Aug.
    • 2 passivation layer on the properties of AlGaN/GaN heterostructure photodiode," Appl. Phys. Lett., vol. 89, no. 6, pp. 062107-1-062107-3, Aug. 2006.
    • (2006) Appl. Phys. Lett. , vol.89 , Issue.6 , pp. 0621071-0621073
    • You, D.1    Tang, Y.2    Xu, J.3    Li, X.4    Li, X.5    Gong, H.6
  • 9
    • 84892610630 scopus 로고    scopus 로고
    • Performance improvement of GaN-based ultraviolet metal-semiconductor- metal photodetectors using chlorination surface treatment
    • May/Jun.
    • H. Y. Lee, D. E. Lu, and C. T. Lee, "Performance improvement of GaN-based ultraviolet metal-semiconductor-metal photodetectors using chlorination surface treatment," J. Vac. Sci. Technol. B, vol. 30, no. 3, pp. 031211-1-031211-4, May/Jun. 2012.
    • (2012) J. Vac. Sci. Technol. B , vol.30 , Issue.3 , pp. 0312111-0312114
    • Lee, H.Y.1    Lu, D.E.2    Lee, C.T.3
  • 10
    • 0038657786 scopus 로고    scopus 로고
    • Improvement of n-GaN Schottky diode rectifying characteristics using KOH etching
    • May
    • J. Spradlin, et al., "Improvement of n-GaN Schottky diode rectifying characteristics using KOH etching," Appl. Phys. Lett., vol. 82, no. 20, pp. 3556-3558, May 2003.
    • (2003) Appl. Phys. Lett. , vol.82 , Issue.20 , pp. 3556-3558
    • Spradlin, J.1
  • 12
    • 82155162452 scopus 로고    scopus 로고
    • Novel oxide-passivated AlGaN/GaN HEMT by using hydrogen peroxide treatment
    • Dec.
    • H. Y. Liu, B. Y. Chou, W. C. Hsu, C. S. Lee, and C. S. Ho, "Novel oxide-passivated AlGaN/GaN HEMT by using hydrogen peroxide treatment," IEEE Trans. Electron Devices, vol. 58, no. 12, pp. 4430-4433, Dec. 2011.
    • (2011) IEEE Trans. Electron Devices , vol.58 , Issue.12 , pp. 4430-4433
    • Liu, H.Y.1    Chou, B.Y.2    Hsu, W.C.3    Lee, C.S.4    Ho, C.S.5
  • 13
    • 79956026601 scopus 로고    scopus 로고
    • Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors
    • Apr.
    • W. S. Tan, P. A. Houston, P. J. Parbrook, D. A. Wood, G. Hill, and C. R. Whitehouse, "Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors," Appl. Phys. Lett., vol. 80, no. 17, pp. 3207-3209, Apr. 2002.
    • (2002) Appl. Phys. Lett. , vol.80 , Issue.17 , pp. 3207-3209
    • Tan, W.S.1    Houston, P.A.2    Parbrook, P.J.3    Wood, D.A.4    Hill, G.5    Whitehouse, C.R.6
  • 15
    • 78149246035 scopus 로고    scopus 로고
    • GaN metal-semiconductor-metal photodetectors with SiN/GaN nucle-ation layer
    • Sep./Oct.
    • Y. K. Su, S. J. Chang, Y. D. Jhou, S. L. Wu, and C. H. Liu, "GaN metal-semiconductor-metal photodetectors with SiN/GaN nucle-ation layer," IEEE Sensors J., vol. 8, nos. 9-10, pp. 1693-1697, Sep./Oct. 2008.
    • (2008) IEEE Sensors J. , vol.8 , Issue.9-10 , pp. 1693-1697
    • Su, Y.K.1    Chang, S.J.2    Jhou, Y.D.3    Wu, S.L.4    Liu, C.H.5
  • 17
    • 84883199469 scopus 로고    scopus 로고
    • Demonstration of a large-area AlGaN/GaN Schottky barrier photode-tector on Si with high detection limit
    • Sep.
    • M. Kumar, C. Y. Lee, H. Sekiguchi, H. Okada, and A. Wakahara, "Demonstration of a large-area AlGaN/GaN Schottky barrier photode-tector on Si with high detection limit," Semicond. Sci. Technol., vol. 28, no. 9, pp. 094005-1-094005-5, Sep. 2013
    • (2013) Semicond. Sci. Technol. , vol.28 , Issue.9 , pp. 0940051-0940055
    • Kumar, M.1    Lee, C.Y.2    Sekiguchi, H.3    Okada, H.4    Wakahara, A.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.