-
1
-
-
84866923247
-
1.4-kV breakdown voltage for AlGaN/GaN high-electron-mobility transistors on silicon substrate
-
Oct.
-
S. L. Selvaraj, A. Watanabe, A. Wakejima, and T. Egawa, "1.4-kV breakdown voltage for AlGaN/GaN high-electron-mobility transistors on silicon substrate," IEEE Electron Device Lett., vol. 33, no. 10, pp. 1375-1377, Oct. 2012.
-
(2012)
IEEE Electron Device Lett.
, vol.33
, Issue.10
, pp. 1375-1377
-
-
Selvaraj, S.L.1
Watanabe, A.2
Wakejima, A.3
Egawa, T.4
-
2
-
-
33846419131
-
High-breakdown-voltage pn-junction diodes on GaN substrates
-
DOI 10.1016/j.jcrysgro.2006.10.246, PII S0022024806011250
-
Y. Yoshizumi, S. Hashimoto, T. Tanabe, and M. Kiyama, "High-breakdown-voltage pn-junction diodes on GaN substrates," J. Cryst. Growth, vol. 298, pp. 875-878, Jan. 2007. (Pubitemid 46149783)
-
(2007)
Journal of Crystal Growth
, vol.298
, Issue.SPEC. ISSUE
, pp. 875-878
-
-
Yoshizumi, Y.1
Hashimoto, S.2
Tanabe, T.3
Kiyama, M.4
-
3
-
-
38549137284
-
Highperformance visible-blind GaN-based p-i-n photodetectors
-
Jan.
-
B. Butun, T. Tut, E. Ulker, T. Yelboga, and E. Ozbay, "Highperformance visible-blind GaN-based p-i-n photodetectors," Appl. Phys. Lett., vol. 92, no. 3, pp. 033507-1-033507-3, Jan. 2008.
-
(2008)
Appl. Phys. Lett.
, vol.92
, Issue.3
, pp. 0335071-0335073
-
-
Butun, B.1
Tut, T.2
Ulker, E.3
Yelboga, T.4
Ozbay, E.5
-
4
-
-
84870567657
-
Bias-selective dual-operation-mode ultraviolet Schottky-barrier photodetectors fabricated on high-resistivity homoepitaxial GaN
-
Dec. 15
-
F. Xie, H. Lu, D. J. Chen, F. F. Ren, R. Zhang, and Y. D. Zheng, "Bias-selective dual-operation-mode ultraviolet Schottky-barrier photodetectors fabricated on high-resistivity homoepitaxial GaN," IEEE Photon. Technol. Lett., vol. 24, no. 24, pp. 2203-2205, Dec. 15, 2012.
-
(2012)
IEEE Photon. Technol. Lett.
, vol.24
, Issue.24
, pp. 2203-2205
-
-
Xie, F.1
Lu, H.2
Chen, D.J.3
Ren, F.F.4
Zhang, R.5
Zheng, Y.D.6
-
5
-
-
48949098163
-
GaN membrane metal-semiconductor-metal ultraviolet photodetector
-
Apr.
-
A. Müller, et al., "GaN membrane metal-semiconductor-metal ultraviolet photodetector," Appl. Opt., vol. 47, no. 10, pp. 1453-1456, Apr. 2008.
-
(2008)
Appl. Opt.
, vol.47
, Issue.10
, pp. 1453-1456
-
-
Müller, A.1
-
6
-
-
79959442506
-
Highperformance GaN metal-insulator-semiconductor ultraviolet photodetec-tors using gallium oxide as gate layer
-
Jun.
-
M. L. Lee, T. S. Mue, F. W. Huang, J. H. Yang, and J. K. Sheu, "Highperformance GaN metal-insulator-semiconductor ultraviolet photodetec-tors using gallium oxide as gate layer," Opt. Express, vol. 19, no. 13, pp. 12658-12663, Jun. 2011.
-
(2011)
Opt. Express
, vol.19
, Issue.13
, pp. 12658-12663
-
-
Lee, M.L.1
Mue, T.S.2
Huang, F.W.3
Yang, J.H.4
Sheu, J.K.5
-
7
-
-
0036476514
-
Inductively coupled plasma-induced damage in AlGaN/GaN HEMTs
-
DOI 10.1149/1.1430363
-
F. A. Khan, V. Kumar, and I. Adesida, "Inductively coupled plasma-induced damage in AlGaN/GaN HEMT," Electrochem. Solid State Lett., vol. 5, no. 2, pp. G8-G9, Feb. 2002. (Pubitemid 34295142)
-
(2002)
Electrochemical and Solid-State Letters
, vol.5
, Issue.2
-
-
Khan, F.A.1
Kumar, V.2
Adesida, I.3
-
8
-
-
33747145573
-
2 passivation layer on the properties of AlGaN/GaN heterostructure photodiode
-
Aug.
-
2 passivation layer on the properties of AlGaN/GaN heterostructure photodiode," Appl. Phys. Lett., vol. 89, no. 6, pp. 062107-1-062107-3, Aug. 2006.
-
(2006)
Appl. Phys. Lett.
, vol.89
, Issue.6
, pp. 0621071-0621073
-
-
You, D.1
Tang, Y.2
Xu, J.3
Li, X.4
Li, X.5
Gong, H.6
-
9
-
-
84892610630
-
Performance improvement of GaN-based ultraviolet metal-semiconductor- metal photodetectors using chlorination surface treatment
-
May/Jun.
-
H. Y. Lee, D. E. Lu, and C. T. Lee, "Performance improvement of GaN-based ultraviolet metal-semiconductor-metal photodetectors using chlorination surface treatment," J. Vac. Sci. Technol. B, vol. 30, no. 3, pp. 031211-1-031211-4, May/Jun. 2012.
-
(2012)
J. Vac. Sci. Technol. B
, vol.30
, Issue.3
, pp. 0312111-0312114
-
-
Lee, H.Y.1
Lu, D.E.2
Lee, C.T.3
-
10
-
-
0038657786
-
Improvement of n-GaN Schottky diode rectifying characteristics using KOH etching
-
May
-
J. Spradlin, et al., "Improvement of n-GaN Schottky diode rectifying characteristics using KOH etching," Appl. Phys. Lett., vol. 82, no. 20, pp. 3556-3558, May 2003.
-
(2003)
Appl. Phys. Lett.
, vol.82
, Issue.20
, pp. 3556-3558
-
-
Spradlin, J.1
-
11
-
-
0035886283
-
x-trated n-type GaN
-
Oct.
-
x-trated n-type GaN," Appl. Phys. Lett., vol. 79, no. 16, pp. 2573-2575, Oct. 2001.
-
(2001)
Appl. Phys. Lett.
, vol.79
, Issue.16
, pp. 2573-2575
-
-
Lee, C.T.1
Lin, Y.J.2
Liu, D.S.3
-
12
-
-
82155162452
-
Novel oxide-passivated AlGaN/GaN HEMT by using hydrogen peroxide treatment
-
Dec.
-
H. Y. Liu, B. Y. Chou, W. C. Hsu, C. S. Lee, and C. S. Ho, "Novel oxide-passivated AlGaN/GaN HEMT by using hydrogen peroxide treatment," IEEE Trans. Electron Devices, vol. 58, no. 12, pp. 4430-4433, Dec. 2011.
-
(2011)
IEEE Trans. Electron Devices
, vol.58
, Issue.12
, pp. 4430-4433
-
-
Liu, H.Y.1
Chou, B.Y.2
Hsu, W.C.3
Lee, C.S.4
Ho, C.S.5
-
13
-
-
79956026601
-
Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors
-
Apr.
-
W. S. Tan, P. A. Houston, P. J. Parbrook, D. A. Wood, G. Hill, and C. R. Whitehouse, "Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors," Appl. Phys. Lett., vol. 80, no. 17, pp. 3207-3209, Apr. 2002.
-
(2002)
Appl. Phys. Lett.
, vol.80
, Issue.17
, pp. 3207-3209
-
-
Tan, W.S.1
Houston, P.A.2
Parbrook, P.J.3
Wood, D.A.4
Hill, G.5
Whitehouse, C.R.6
-
15
-
-
78149246035
-
GaN metal-semiconductor-metal photodetectors with SiN/GaN nucle-ation layer
-
Sep./Oct.
-
Y. K. Su, S. J. Chang, Y. D. Jhou, S. L. Wu, and C. H. Liu, "GaN metal-semiconductor-metal photodetectors with SiN/GaN nucle-ation layer," IEEE Sensors J., vol. 8, nos. 9-10, pp. 1693-1697, Sep./Oct. 2008.
-
(2008)
IEEE Sensors J.
, vol.8
, Issue.9-10
, pp. 1693-1697
-
-
Su, Y.K.1
Chang, S.J.2
Jhou, Y.D.3
Wu, S.L.4
Liu, C.H.5
-
17
-
-
84883199469
-
Demonstration of a large-area AlGaN/GaN Schottky barrier photode-tector on Si with high detection limit
-
Sep.
-
M. Kumar, C. Y. Lee, H. Sekiguchi, H. Okada, and A. Wakahara, "Demonstration of a large-area AlGaN/GaN Schottky barrier photode-tector on Si with high detection limit," Semicond. Sci. Technol., vol. 28, no. 9, pp. 094005-1-094005-5, Sep. 2013
-
(2013)
Semicond. Sci. Technol.
, vol.28
, Issue.9
, pp. 0940051-0940055
-
-
Kumar, M.1
Lee, C.Y.2
Sekiguchi, H.3
Okada, H.4
Wakahara, A.5
-
18
-
-
0000585653
-
Effect of dielectric layers on the performance of algan-based uv schottky photodiodes
-
DOI 10.1002/1521-396X(200111)188 :1<307::AID-PSSA307>3.0.CO;2-T
-
E. Monroy, et al., "Effect of dielectric layers on the performance of AlGaN-based UV Schottky photodiodes," Phys. Status Solidi A, Appl. Mater. Sci., vol. 188, no. 1, pp. 307-310, Nov. 2001. (Pubitemid 33700926)
-
(2001)
Physica Status Solidi (A) Applied Research
, vol.188
, Issue.1
, pp. 307-310
-
-
Monroy, E.1
Calle, F.2
Pau, J.L.3
Munoz, E.4
Verdu, M.5
Sanchez, E.J.6
Montojo, M.T.7
Omnes, F.8
Bougrioua, Z.9
Moerman, I.10
San Andres, E.11
-
19
-
-
79952908287
-
A β-Ga2O3/GaN Schottky-barrier photodetector
-
Apr.
-
W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang, and H. T. Hsueh, "A β-Ga2O3/GaN Schottky-barrier photodetector," IEEE Photon. Tech-nol. Lett., vol. 23, no. 7, pp. 444-446, Apr. 2011.
-
(2011)
IEEE Photon. Tech-nol. Lett.
, vol.23
, Issue.7
, pp. 444-446
-
-
Weng, W.Y.1
Hsueh, T.J.2
Chang, S.J.3
Huang, G.J.4
Hsueh, H.T.5
|