Inductively coupled plasma-induced damage in AlGaN/GaN HEMTs

Electrochemical and Solid-State Letters

Volumn 5, Issue 2, 2002, Pages

  Khan, F A ^a   Kumar, V ^a   Adesida, I ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRON GAS; GALLIUM NITRIDE; HALL EFFECT; INDUCTIVELY COUPLED PLASMA; ION BOMBARDMENT; OHMIC CONTACTS; RAPID THERMAL ANNEALING; REACTIVE ION ETCHING; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS;

ALUMINUM GALLIUM NITRIDE; PLASMA-INDUCED DAMAGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036476514     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1430363     Document Type: Article

References (5)