메뉴 건너뛰기




Volumn 12, Issue 4, 2013, Pages

Advanced plasma etch technologies for nanopatterning

Author keywords

atomic layer etch; defectivity; plasma etch; sidewall image transfer; surface integrity

Indexed keywords

INFORMATION TECHNOLOGY; PLASMA ETCHING; PLASMAS;

EID: 84892178851     PISSN: 19325150     EISSN: 19325134     Source Type: Journal    
DOI: 10.1117/1.JMM.12.4.041311     Document Type: Article
Times cited : (3)

References (20)
  • 1
    • 84885139865 scopus 로고    scopus 로고
    • Plasma etching: Yesterday, today,tomorrow
    • V. Donnelly Kornblit, "Plasma etching: yesterday, today,tomorrow," J. Vac. Sci. Technol. A 31, 050825 (2013).
    • (2013) J. Vac. Sci. Technol. A , vol.31 , pp. 050825
    • Donnelly, V.1    Kornblit2
  • 4
    • 0000357434 scopus 로고
    • Microloading Effect Highly Selective SiO2 Contact Hole Etching Employing Inductively-coupled Plasma, Jpn
    • T. Fukasawa et al., "Microloading effect highly selective SiO2 contact hole etching employing inductively-coupled plasma, Jpn. J. Appl. Phys. 33(12), 7042-7046 (1994).
    • (1994) J. Appl. Phys. , vol.33 , Issue.12 , pp. 7042-7046
    • Fukasawa, T.1
  • 5
    • 0030121267 scopus 로고    scopus 로고
    • Characterization of highly selective SiO2/Si3N4 etching of high-aspect-ratio holes
    • H. Hayashi, K. Kurihara,M. Sekine, "Characterization of highly selective SiO2/Si3N4 etching of high-aspect-ratio holes," Jpn. J. Appl. Phys 35, 2488-2493 (1996).
    • (1996) Jpn. J. Appl. Phys , vol.35 , pp. 2488-2493
    • Hayashi, H.1    Kurihara, K.2    Sekine, M.3
  • 7
    • 36448999613 scopus 로고    scopus 로고
    • Charge-free etching process using positive and negative ions in pulse-time modulated electron cyclotron resonance plasma with low-frequency bias
    • DOI 10.1063/1.116152, PII S0003695196046178
    • H. Ohtake S. Samukawa, "Charge-free etching process using positive negative ions pulse-time modulated electron cyclotron resonance plasma with low-frequency bias," Appl. Phys. Lett. 68(17), 2416-2417 (1996). (Pubitemid 126683828)
    • (1996) Applied Physics Letters , vol.68 , Issue.17 , pp. 2416-2417
    • Ohtake, H.1    Samukawa, S.2
  • 9
    • 77957723719 scopus 로고    scopus 로고
    • Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing
    • Petit-Etienne et al., "Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing," J. Vac. Sci. Technol. B 28(5), 926-934 (2010).
    • (2010) J. Vac. Sci. Technol. B , vol.28 , Issue.5 , pp. 926-934
    • Petit-Etienne1
  • 12
    • 31044447769 scopus 로고    scopus 로고
    • Study on self-aligned contact oxide etching using C5F8?O2?Ar C5F8?O2?Ar?CH2F2 plasma
    • S. Kim et al., "Study on self-aligned contact oxide etching using C5F8?O2?Ar C5F8?O2?Ar?CH2F2 plasma," J. Vac. Sci. Technol. A 23(4) (2005).
    • (2005) J. Vac. Sci. Technol. A , vol.23 , pp. 4
    • Kim, S.1
  • 13
    • 0032687859 scopus 로고    scopus 로고
    • Advanced plasma technology microelectronics
    • Jung et al., "Advanced plasma technology microelectronics," ThSolid Films 341(1-2), 112-119 (1999).
    • (1999) ThSolid Films , vol.341 , Issue.1-2 , pp. 112-119
    • Jung1
  • 14
    • 84892184456 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors March 2013
    • International Technology Roadmap for Semiconductors, www.itrs.net/Links/ 2010ITRS/Home2010.htm (March 2013).
  • 15
    • 0001225044 scopus 로고    scopus 로고
    • Plasma sheath model and ion energy distribution for all radio frequencies
    • T. Panagopoulos D. Economou, "Plasma sheath modelion energy distribution for all radio frequencies," J. Appl. Phys. 85(7), 3435-3443 (1999). (Pubitemid 129618141)
    • (1999) Journal of Applied Physics , vol.85 , Issue.7 , pp. 3435-3443
    • Panagopoulos, T.1    Economou, D.J.2
  • 16
    • 71749086979 scopus 로고    scopus 로고
    • Synchronous pulse plasma operation upon sourcebias radio frequencys for inductively coupled plasma for highly reliable gate etching technology
    • Tokashiki et al., "Synchronous pulse plasma operation upon sourcebias radio frequencys for inductively coupled plasma for highly reliable gate etching technology," Jpn. J. Appl. Phys. 48(8), 08HD01 (2009).
    • (2009) Jpn. J. Appl. Phys. , vol.48 , Issue.8
    • Tokashiki1
  • 18
    • 84875125239 scopus 로고    scopus 로고
    • Ultimate top-down processes for future nanoscale devices
    • S. Samukawa, "Ultimate top-down processes for future nanoscale devices," Proc. SPIE 8328, 832804 (2012).
    • (2012) Proc. SPIE , vol.8328 , pp. 832804
    • Samukawa, S.1
  • 19
    • 0034156292 scopus 로고    scopus 로고
    • Reduction of plasma induced damage an inductively coupled plasma using pulsed source power
    • onomou
    • S. Samukawa et al., "Reduction of plasma induced damage an inductively coupled plasma using pulsed source power," J. Vac. Sci. Technol. B 18(2), 834-840 (2000). Onomou.
    • (2000) J. Vac. Sci. Technol. B , vol.18 , Issue.2 , pp. 834-840
    • Samukawa, S.1
  • 20
    • 34248378775 scopus 로고    scopus 로고
    • Fundamentals and applications of ion-ion plasmas
    • Fundamentals and applications of ion-ion plasmas" Appl. Surf. Sci. 253, 6672-6680 (2007).
    • (2007) Appl. Surf. Sci. , vol.25 , pp. 6672-6680


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.