Advanced plasma technology in microelectronics

Thin Solid Films

Volumn 341, Issue 1, 1999, Pages 112-119

  Jung, C O ^a   Chi, K K ^a   Hwang, B G ^a   Moon, J T ^a   Lee, M Y ^a   Lee, J G ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; DISSOCIATION; ELECTRODES; ENERGY GAP; GATES (TRANSISTOR); PLASMA ETCHING; POLYMERIZATION; REACTIVE ION ETCHING; SEMICONDUCTOR PLASMAS;

CRITICAL DIMENSION CONTROL; GATE ELECTRODE; HIGH DENSITY PLASMA; INTERMETAL DIELECTRICS; MAGNETICALLY ENHANCED REACTIVE ION ETCHING; PULSE PLASMA; SELF ALIGNED CONTACT;

MICROELECTRONICS;

EID: 0032687859     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01522-3     Document Type: Article

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