Pre- And post-breakdown electrical studies in ultrathin al2o3 films by conductive atomic force microscopy

Current Applied Physics

Volumn 13, Issue 9, 2013, Pages 1865-1869

  Ganesan, K ^a   Ilango, S ^a   Shanmugam, Mariyappan ^b   Baroughi, M Farrokh ^b   Kamruddin, M ^a   Tyagi, A K ^a  

^a INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

^b South Dakota State University   (United States)

Author keywords

Atomic layer deposition; Conductive atomic force microscopy; Dielectric breakdown; Electrical characterization; Reliability

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATOMIC FORCE MICROSCOPY; ATOMIC LAYER DEPOSITION; CONDUCTIVE FILMS; ULTRATHIN FILMS;

AL2O3 FILMS; ATOMIC-LAYER DEPOSITION; CONDUCTIVE ATOMIC FORCE MICROSCOPY; DIELECTRIC INTEGRITY; DIELECTRICS BREAKDOWN; ELECTRICAL CHARACTERIZATION; ELECTRICAL STUDIES; LOCAL DIELECTRICS; PREBREAKDOWN; ULTRA-THIN;

ELECTRIC FIELDS;

EID: 84892174420     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2013.07.017     Document Type: Article

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