Effect of atomic layer deposited ultra thin HfO2 and Al2O3 interfacial layers on the performance of dye sensitized solar cells

Thin Solid Films

Volumn 518, Issue 10, 2010, Pages 2678-2682

  Shanmugam, Mariyappan ^a   Baroughi, Mahdi Farrokh ^a   Galipeau, David ^a  

^a South Dakota State University   (United States)

Author keywords

Atomic layer deposition; Dye sensitized solar cell; Interface; Metal oxides

Indexed keywords

ALUMINUM OXIDES; ATOMIC LAYER DEPOSITED; DYE LOADING; DYE SENSITIZED SOLAR CELL; DYE-SENSITIZED SOLAR CELLS; INTERFACE; INTERFACE STATE; INTERFACIAL LAYER; LIQUID ELECTROLYTES; MESOPOROUS TIO; METAL OXIDE LAYERS; METAL OXIDES; ORGANIC DYE; PHOTOELECTRODE; TIO; ULTRA-THIN; ULTRA-THIN OXIDE;

ALUMINA; ALUMINUM; ATOMIC LAYER DEPOSITION; ATOMS; HAFNIUM; HAFNIUM OXIDES; METALLIC COMPOUNDS; METALS;

SOLAR CELLS;

EID: 76049111848     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.08.033     Document Type: Article

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