SCOPUS 정보 검색 플랫폼

Journal of Vacuum Science and Technology B

Volumn 29, Issue 1, 2011, Pages

Gate oxide reliability at the nanoscale evaluated by combining conductive atomic force microscopy and constant voltage stress

(5) Erlbacher, T a Yanev, V a Rommel, M a Bauer, A J a Frey, L a,b

a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB (Germany)

b Department of Electron Devices ^* (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARGE TRAPPING; DIELECTRIC MATERIALS; ELECTRODES; GATE DIELECTRICS; GATES (TRANSISTOR); LOW-K DIELECTRIC; NANOTECHNOLOGY; NITRIDES; OXIDE FILMS; REFRACTORY METAL COMPOUNDS; SILICA; SILICON NITRIDE; WEIBULL DISTRIBUTION;

CHARGE TRAPPING EFFECT; CONDUCTIVE ATOMIC FORCE MICROSCOPY; CONSTANT VOLTAGE STRESS; CONVENTIONAL CURRENTS; GATE OXIDE INTEGRITY; GATE OXIDE RELIABILITY; ORDERS OF MAGNITUDE; WEIBULL FAILURE DISTRIBUTION;

HAFNIUM OXIDES;

EID: 79551646044 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3532820 Document Type: Conference Paper

Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.