Improving the quality of epitaxial foils produced using a porous silicon-based layer transfer process for high-efficiency thin-film crystalline silicon solar cells

IEEE Journal of Photovoltaics

Volumn 4, Issue 1, 2014, Pages 70-77

  Radhakrishnan, Hariharsudan Sivaramakrishnan ^a,b   Martini, Roberto ^a,b   Depauw, Valérie ^a   Van Nieuwenhuysen, Kris ^a   Debucquoy, Maarten ^a   Govaerts, Jonathan ^a   Gordon, Ivan ^a   Mertens, Robert ^a,b   Poortmans, Jef ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Crystal defects; Epitaxy; Layer transfer; Minority carrier lifetime; Porous silicon; Stress; Surface roughness

Indexed keywords

CRYSTALLINE SILICON SOLAR CELLS; DIFFUSION LENGTH; HIGH-EFFICIENCY SOLAR CELLS; INJECTION LEVELS; LAYER TRANSFER; LAYER TRANSFER PROCESS; MINORITY CARRIER LIFETIMES; NEAR SURFACE REGIONS;

CRYSTAL DEFECTS; EFFICIENCY; EPITAXIAL GROWTH; SILICON SOLAR CELLS; STRESSES; SURFACE ROUGHNESS;

POROUS SILICON;

EID: 84891633757     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2013.2282740     Document Type: Article

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