Study and estimation of the residual stress in porous silicon layer formed on the surface of a crystalline silicon substrate

Thin Solid Films

Volumn 516, Issue 20, 2008, Pages 6924-6929

  Ghannam, Moustafa Y ^a   Hassan, Mostafa M ^c   DePauw, Valerie ^b   Beaucarne, Guy ^b   Poortmans, Jef ^b   Mertens, Robert ^b  

^a KUWAIT UNIVERSITY   (Kuwait)

^b IMEC   (Belgium)

^c NONE

Author keywords

High temperature Si annealing; Porous silicon; Residual stress; Surface stress; Thin films

Indexed keywords

ANNEALING; ARGON; DESORPTION; HYDROGEN; HYDROGEN BONDS; INERT GASES; LITHOGRAPHY; NONMETALS; ONE DIMENSIONAL; RESIDUAL STRESSES; SILICON; STEEL ANALYSIS; STRENGTH OF MATERIALS; STRESSES; SURFACE PROPERTIES; SURFACES; TWO DIMENSIONAL;

(1 1 0) SURFACE; (100) SILICON; (2+1)-DIMENSIONAL; (ABIOTIC AND BIOTIC) STRESS; CRYSTALLINE SILICONS; CYLINDRICAL PORES; ELSEVIER (CO); FEMLAB SIMULATIONS; HIGH-TEMPERATURE ANNEALING; LATERAL SURFACES; MACRO POROUS SILICON; PORE DISTRIBUTIONS; PORE SHAPES; SI SI BONDS; SILICON LAYERS; SIMULATION RESULTS; STRUCTURAL EVOLUTIONS; SURFACE STRESSES;

POROUS SILICON;

EID: 45849119472     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.12.086     Document Type: Article

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