Development of a-Si:H/c-Si heterojunctions for the i2-module concept: Low-temperature passivation and emitter formation on wafers bonded to glass

Solar Energy Materials and Solar Cells

Volumn 113, Issue , 2013, Pages 52-60

  Govaerts, Jonathan ^a   Nicola Granata, Stefano ^a   Bearda, Twan ^a   Dross, Frederic ^a   Boulord, Caroline ^b   Beaucarne, Guy ^b   Korsos, Ferenc ^c,d   Baert, Kris ^a   Gordon, Ivan ^a   Poortmans, Jef ^a  

^a IMEC   (Belgium)

^b Dow Corning SA Belgium   (Belgium)

^c SEMILAB SEMICONDUCTOR PHYSICS LABORATORY CO LTD   (Hungary)

^d Hanwha Solar America   (United States)

Author keywords

Heterojunction; Module level processing; PECVD; Silicone bonding

Indexed keywords

A-SI:H; A-SI:H/C-SI; BONDED WAFERS; COMMERCIAL PRODUCTS; CRYSTALLINE SILICON CELLS; CRYSTALLINE SILICON TECHNOLOGY; DEPOSITION PROCESS; HYDROGENATED AMORPHOUS SILICON (A-SI:H); LOW TEMPERATURES; ON-WAFER; SOLAR CELL DEVICES; SUPERSTRATES; SURFACE PASSIVATION; THIN-FILM TECHNOLOGY; TOWARD INTEGRATION;

BONDING; GLASS; HETEROJUNCTIONS; PASSIVATION; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCREENING; SILICON; SILICONES; TECHNOLOGY; TEMPERATURE; WAFER BONDING;

SILICON WAFERS;

EID: 84874684367     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2013.01.029     Document Type: Article

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