Scanning transmission X-ray microscopy probe for in situ mechanism study of graphene-oxide-based resistive random access memory

Journal of Synchrotron Radiation

Volumn 21, Issue 1, 2014, Pages 170-176

  Nho, Hyun Woo ^a   Kim, Jong Yun ^a,b   Wang, Jian ^c   Shin, Hyun Joon ^d   Choi, Sung Yool ^b   Yoon, Tae Hyun ^a  

^a Hanyang University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c CANADIAN LIGHT SOURCE INC   (Canada)

^d Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

bipolar resistive switching mechanism; GO RRAM; graphene oxide; in situ; oxygen ion drift model; scanning transmission X ray microscopy; STXM

Indexed keywords

GO-RRAM; GRAPHENE OXIDES; ION DRIFTS; RESISTIVE SWITCHING MECHANISMS; SCANNING TRANSMISSION X RAY MICROSCOPY; STXM;

GRAPHENE; OXYGEN; PROBES; SWITCHING SYSTEMS; TRANSMISSION ELECTRON MICROSCOPY;

X RAYS;

GRAPHENE OXIDE; GRAPHITE; OXIDE;

ARTICLE; BIPOLAR RESISTIVE SWITCHING MECHANISM; CHEMISTRY; GO-RRAM; IN SITU; METHODOLOGY; MICROSCOPY; MOLECULAR PROBE; OXYGEN ION DRIFT MODEL; SCANNING TRANSMISSION X-RAY MICROSCOPY; STXM; X RAY ABSORPTION SPECTROSCOPY;

BIPOLAR RESISTIVE SWITCHING MECHANISM; GO-RRAM; GRAPHENE OXIDE; IN SITU; OXYGEN ION DRIFT MODEL; SCANNING TRANSMISSION X-RAY MICROSCOPY; STXM;

GRAPHITE; MICROSCOPY; MOLECULAR PROBES; OXIDES; X-RAY ABSORPTION SPECTROSCOPY;

EID: 84891597904     PISSN: 09090495     EISSN: 16005775     Source Type: Journal    
DOI: 10.1107/S1600577513026696     Document Type: Article

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