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Volumn 20, Issue 23, 2010, Pages 4884-4887

In situ STXM investigations of pentacene-based OFETs during operation

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PERFORMANCE; HIGH VACUUM; IN-SITU; PENTACENES; SILICON NITRIDE MEMBRANE; SPECTRAL CHANGE; ULTRA-THIN;

EID: 77952986520     PISSN: 09599428     EISSN: 13645501     Source Type: Journal    
DOI: 10.1039/c0jm00423e     Document Type: Article
Times cited : (26)

References (30)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.