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Volumn 96, Issue 7, 2010, Pages

Misfit strain relaxation in m -plane epitaxy of InGaN on ZnO

(10) Wu, Z H a Sun, K W a Wei, Q Y a Fischer, A M a Ponce, F A a Kawai, Y b Iwaya, M b Kamiyama, S b Amano, H b Akasaki, I b

a ARIZONA STATE UNIVERSITY (United States)

b MEIJO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC LATTICE MISMATCH; INGAN EPILAYERS; LATTICE MISFIT STRAIN; M-PLANE; MISFIT DISLOCATIONS; MISFIT STRAIN RELAXATION; NEW APPROACHES; PERIODIC ARRAYS; ZNO;

BURGERS VECTOR; COMPRESSIVE STRESS; CRYSTAL GROWTH; INDIUM; SEMICONDUCTOR QUANTUM WELLS; STACKING FAULTS; STRAIN CONTROL; STRAIN RELAXATION; TENSILE STRESS; ZINC OXIDE;

LATTICE MISMATCH;

EID: 77249149447 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3315944 Document Type: Article

Times cited : (9)

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