Single crystalline InGaAs nanopillar grown on polysilicon with dimensions beyond the substrate grain size limit

Nano Letters

Volumn 13, Issue 12, 2013, Pages 5931-5937

  Ng, Kar Wei ^a   Tran, Thai Truong D ^a   Ko, Wai Son ^a   Chen, Roger ^a   Lu, Fanglu ^a   Chang Hasnain, Connie J ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

GaAs nanopillar; GaAs nanowire; nanolaser; poly Si; silicon

Indexed keywords

GAAS NANOWIRES; MONOLITHIC INTEGRATION; NANO LASERS; NANOPILLAR; OPTICAL QUALITIES; POLY-SI DEPOSITION; SINGLE-CRYSTALLINE; SUBSTRATE CRYSTALS;

CMOS INTEGRATED CIRCUITS; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; GALLIUM ARSENIDE; GRAIN SIZE AND SHAPE; MICROMETERS; NANOWIRES; OPTICAL PUMPING; OPTOELECTRONIC DEVICES; POLYSILICON; SEMICONDUCTING GALLIUM; SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING SILICON;

GALLIUM; GALLIUM ARSENIDE; INDIUM; NANOMATERIAL; ORGANOARSENIC DERIVATIVE; POLYMER; SILICON;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; LASER; OPTICS; SURFACE PROPERTY;

ARSENICALS; CRYSTALLIZATION; GALLIUM; INDIUM; LASERS; NANOSTRUCTURES; OPTICS AND PHOTONICS; POLYMERS; SILICON; SURFACE PROPERTIES;

EID: 84890423817     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl403555z     Document Type: Article

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