Structural analysis of highly relaxed GaSb grown on GaAs substrates with periodic interfacial array of 90° misfit dislocations

Nanoscale Research Letters

Volumn 4, Issue 12, 2009, Pages 1458-1462

  Jallipalli, A ^a   Balakrishnan, G ^b   Huang, S H ^b   Rotter, T J ^b   Nunna, K ^a   Liang, B L ^a   Dawson, L R ^b   Huffaker, D L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

GaSb GaAs; Interfacial misfit dislocations (IMF) or Lomer dislocations; Moir fringes; Molecular beam epitaxy; Semiconductor; Strain relief; Structural properties

Indexed keywords

DISLOCATION NETWORKS; FRINGE PATTERN; GAAS SUBSTRATES; GASB/GAAS; GROWTH MODES; HETERO INTERFACES; INTERFACIAL MISFIT; INTERFACIAL MISFIT DISLOCATIONS; INTERFACIAL MISFIT DISLOCATIONS (IMF) OR LOMER DISLOCATIONS; LOW DENSITY; MISFIT DISLOCATIONS; STRAIN RELIEF; TETRAGONAL DISTORTION; THREADING DISLOCATION; THREADING DISLOCATION DENSITIES; TRANSMISSION ELECTRON MICROGRAPH;

CRYSTAL GROWTH; EDGE DISLOCATIONS; EPITAXIAL LAYERS; GALLIUM ARSENIDE; LATTICE MISMATCH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTICAL ENGINEERING; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; STRUCTURAL ANALYSIS; STRUCTURAL PROPERTIES;

GALLIUM ALLOYS;

EID: 74649085048     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1007/s11671-009-9420-9     Document Type: Article

References (16)

1. R. A. Hogg, K. Suzuki, K. Tachibana, L. Finger, K. Hirakawa, Y. Arakawa, Appl. Phys. Lett. 72, 2856 (1998).
2. L. Müller-Kirsch, R. Heitz, U. W. Pohl, D. Bimberg, I. Häusler, H. Kirmse, W. Neumann, Appl. Phys. Lett. 29, 1027 (2001).
3. V. N. Strocov, G. E. Cirlin, J. Sadowski, J. Kanski, R. Claessen, Nanotechnology 16, 1326 (2005).
4. V. P. Kunets, S. Easwaran, W. T. Black, D. Guzun, I. Mazur Yu, N. Goel, T. D. Mishima, M. B. Santos, G. J. Salamo, IEEE Trans. Elec. Dev. 56(4), 683-687 (2009).
5. J. W. Matthews, A. E. Blakeslee, J. Cryst. Growth 29, 273 (1975).
6. B. R. Bennett, Appl. Phys. Lett. 73, 3736 (1998).
7. Y.-C. Xin, L. G. Vaughn, L. R. Dawson, A. Stintz, Y. Lin, L. F. Lester, D. L. Huffaker, J. Appl. Phys. 94, 2133 (2003).
8. A. Jallipalli, G. Balakrishnan, S. H. Huang, L. R. Dawson, D. L. Huffaker, J. Cryst. Growth 303, 449 (2007).
9. J. Tatebayashi, A. Jallipalli, M. N. Kutty, S. H. Huang, G. Balakrishnan, L. R. Dawson, D. L. Huffaker, Appl. Phys. Lett. 91, 141102 (2007).
10. S. H. Huang, G. Balakrishnan, A. Khoshakhalgh, A. Jallipalli, L. R. Dawson, D. L. Huffaker, Appl. Phys. Lett. 88, 131911 (2006).
11. Z.-Q. Zhou, Y.-Q. Xu, R.-T. Hao, B. Tang, Z.-W. Ren, Z.-C. Niu, Chin. Phys. Lett 26, 018101 (2009).
12. D. B. Williams, C. B. Carter, Transmission Electron Microscopy Imaging III (Plenum press, New York, 1996).
13. Th. Kehagias, Ph. Komninou, G. Nouet, P. Ruterana, Th. Karakostas, Phys. Rev. B 64, 195329 (2001).
14. P. B. Hirsch, A. Howie, R. B. Nicholson, D. W. Pashley, M. J. Whealn, Electron Microscopy of Thin Crystals (Butter Worths, London, 1969).
15. D. W. Pashley, J. W. Menter, G. A. Bassett, Nature 179, 752 (1957).
16. A. Rocher, E. Snoeck, Mater. Sci. Eng. B 67, 62 (1999).