Structural characterization of GaN nanowires fabricated via direct reaction of Ga vapor and ammonia

Materials Research Society Symposium - Proceedings

Volumn 675, Issue , 2001, Pages

  Jacobs, R N ^a   Salamanca Riba, L ^a   He, M ^a   Harris, G L ^a   Zhou, P ^a   Mohammad, S N ^a   Halpern, J B ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CHEMICAL REACTIONS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; ENERGY DISPERSIVE SPECTROSCOPY; GALLIUM; GALLIUM COMPOUNDS; NUCLEATION; TRANSMISSION ELECTRON MICROSCOPY; VAPORS; X RAY DIFFRACTION ANALYSIS;

DIRECT REACTION; ENERGY DISPERSIVE X RAY SPECTROSCOPY; NANOWIRES; THIN HEXAGONAL PLATELETS;

NANOSTRUCTURED MATERIALS;

EID: 0035559016     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)