SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 609, Issue , 2013, Pages 207-214

Growth of side facets in InP nanowires: First-principles-based approach

(4) Yamashita, T a Akiyama, T a Nakamura, K a Ito, T a

a MIE UNIVERSITY (Japan)

Author keywords

First principles calculations; InP 1 1 00; InP 11 2 0; InP nanowires; Side facets

Indexed keywords

FIRST-PRINCIPLES CALCULATION; GROWTH CONDITIONS; GROWTH MODES; GROWTH PROCESS; HIGH TEMPERATURE; INP; LATERAL DIRECTIONS; LOW TEMPERATURES; MONTE CARLO SIMULATION; PRESSURE DEPENDENCE; REALISTIC ENVIRONMENTS; SELECTIVE AREA GROWTH; SIDE FACETS; V/III RATIO;

ADSORPTION; CALCULATIONS; DENSITY FUNCTIONAL THEORY; MONTE CARLO METHODS;

NANOWIRES;

EID: 84873055905 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/j.susc.2012.12.009 Document Type: Article

Times cited : (6)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.