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Volumn 42, Issue 2 B, 2003, Pages
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Suppression of crack generation in GaN/AlGaN distributed Bragg reflector on sapphire by the insertion of GaN/AlGaN superlattice grown by metal-organic chemical vapor deposition
a
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Author keywords
AlGaN; Distributed Bragg reflector; GaN; MOCVD; Reciprocal space map; Superlattice; Vertical cavity surface emitting laser
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Indexed keywords
ALUMINUM ALLOYS;
AMMONIA;
CRACK PROPAGATION;
GALLIUM NITRIDE;
LATTICE CONSTANTS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MORPHOLOGY;
SAPPHIRE;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTOR LASERS;
SEMICONDUCTOR SUPERLATTICES;
SUBSTRATES;
ALUMINUM GALLIUM NITRIDE;
CRACK GENERATION;
DISTRIBUTED BRAGG REFLECTOR;
RECIPROCAL SPACE MAP;
TRIMETHYLALUMINUM;
TRIMETHYLGALLIUM;
TRIMETHYLINDIUM;
VERTICAL CAVITY SURFACE EMITTING LASER;
MIRRORS;
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EID: 0037442183
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.42.L144 Document Type: Letter |
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Times cited : (37)
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References (11)
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