Modulated epitaxial lateral overgrowth of AlN for efficient UV LEDs

IEEE Photonics Technology Letters

Volumn 24, Issue 18, 2012, Pages 1603-1605

  Kueller, Viola ^a   Knauer, Arne ^a   Reich, Christoph ^b   Mogilatenko, Anna ^a   Weyers, Markus ^a   Stellmach, Joachim ^b   Wernicke, Tim ^b   Kneissl, Michael ^b   Yang, Zhihong ^c   Chua, Christopher L ^c   Johnson, Noble M ^c  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c PALO ALTO RESEARCH CENTER   (United States)

Author keywords

Epitaxial growth; epitaxial layers; light emitting diodes (LEDs); semiconductor materials

Indexed keywords

ALN; ALN LAYERS; CRACK-FREE LAYERS; EPITAXIAL LATERAL OVERGROWTH; LATERAL GROWTH; OUTPUT POWER; SAPPHIRE TEMPLATES; THREADING DISLOCATION DENSITIES; TWO-STEP GROWTH; ULTRAVIOLET LED; UV LEDS;

COALESCENCE; EPITAXIAL GROWTH; EPITAXIAL LAYERS; SAPPHIRE; SEMICONDUCTOR MATERIALS;

LIGHT EMITTING DIODES;

EID: 84865742838     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2012.2210542     Document Type: Article

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