Future of AlxGa1-xN materials and device technology for ultraviolet photodetectors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4650, Issue , 2002, Pages 199-206

  Kung, Patrick ^a   Yasan, Alireza ^a   McClintock, Ryan ^a   Darvish, Shaban ^a   Mi, Kan ^a   Razeghi, Manijeh ^a  

^a Northwestern University   (United States)

Author keywords

AlxGa1 xN; Back illuminated; Low resistivity; p type; Photodetector; Piezoelectric; Polarization fields; Superlattice; Ultraviolet

Indexed keywords

ENERGY GAP; GALLIUM NITRIDE; OPTIMIZATION; PHOTOCONDUCTIVITY; PHOTODIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES;

ULTRAVIOLET PHOTODETECTORS;

ULTRAVIOLET DETECTORS;

EID: 0036060511     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.467650     Document Type: Conference Paper

References (17)

1. 4 substrates
2. ≤1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition
3. Solar-blind AlaN photodiodes with very low cutoff wavelength
4. 1-xN p-i-n photodiodes on sapphire substrates
5. 1-xN materials and devices technology for solar blind ultraviolet photodetector applications
6. Solar-blind AlGaN-based inverted heterostructure photodiodes
7. Back illuminated AlGaN solar-blind photodetectors
8. 1-xN for solar-blind UV detectors
9. 0.92N grown by metalorganic vapor phase epitaxy
10. Aluminum gallium nitride short-period superlattices doped with magnesium
11. Doping characteristics and electrical properties of Mg-doped AlGaN grown by atmospheric-pressure MOCVD
12. Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films
13. 1-xN/GaN superlattice
14. 0.8N/GaN superlattices
15. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures