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Volumn 44, Issue 12, 2013, Pages 1072-1076

Reconfigurable CMOS with undoped silicon nanowire midgap Schottky-barrier FETs

Author keywords

(Multi ) SOI; Midgap Schottky barrier; Multi gate; Silicon nanowire; Virtually dopant free

Indexed keywords

(MULTI-) SOI; DOPANT-FREE; MULTI-GATE; SCHOTTKY BARRIERS; SILICON NANOWIRES;

EID: 84889265002     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2012.08.004     Document Type: Article
Times cited : (25)

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  • 3
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    • Wessely, F.1    Krauss, T.2    Schwalke, U.3
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    • Complementary silicide source/drain thin-body Mosfets for the 20 nm gate length regime
    • J. Kedzierski, P. Xuan, E. Anderson, J. Bokor, T.-J. King, and C. Hu Complementary silicide source/drain thin-body Mosfets for the 20 nm gate length regime Tech. Dig. IEDM 2000 57 60
    • (2000) Tech. Dig. IEDM , pp. 57-60
    • Kedzierski, J.1    Xuan, P.2    Anderson, E.3    Bokor, J.4    King, T.-J.5    Hu, C.6
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    • Overview and status of metal S/D Schottky-barrier MOSFET technology
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    • Larson, J.M.1    Snyder, J.P.2
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    • (2010) Trans. ECS , vol.33 , pp. 169-173
    • Wessely, F.1    Krauss, T.2    Endres, R.3    Schwalke, U.4
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    • The work function of the elements and its periodicity
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.