SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium Proceedings

Volumn 829, Issue , 2005, Pages 319-324

Nickel silicide work function tuning study in metal-gate CMOS applications

(4) Yuan, Jun a Pan, Grant Z a Chao, Yu Lin a Woo, Jason C S a

a Engineering IV (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION TEMPERATURE; NICKEL SILICIDE; NITROGEN IMPLANTATION; WORK FUNCTION TUNING;

ARSENIC COMPOUNDS; CMOS INTEGRATED CIRCUITS; DOPING (ADDITIVES); ELECTRIC POTENTIAL; ELECTRIC POWER UTILIZATION; LEAKAGE CURRENTS; MOS CAPACITORS; MOSFET DEVICES; POLYSILICON;

SILICON COMPOUNDS;

EID: 20344401308 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (3)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.