CMOS without doping: Midgap Schottky-barrier nanowire field-effect- transistors for high-temperature applications

European Solid-State Device Research Conference

Volumn , Issue , 2011, Pages 263-266

  Wessely, Frank ^a   Krauss, Tillmann ^a   Schwalke, Udo ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD-EFFECT; HIGH TEMPERATURE STABILITY; HIGH-TEMPERATURE ENVIRONMENT; MAXIMUM OUTPUT; OFF-STATE CURRENT; SCHOTTKY BARRIERS;

ELECTRIC PROPERTIES; HIGH TEMPERATURE APPLICATIONS; NANOWIRES;

FIELD EFFECT TRANSISTORS;

EID: 82955195085     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2011.6044184     Document Type: Conference Paper

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